An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, ##STR00001## in Formula (1), Z represents a halogen atom, a group represented by R.sub.11OCH.sub.2—, or a group represented by R.sub.12OC(═O)CH.sub.2—. R.sub.11 and R.sub.12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

A resist composition including a compound (D0) represented by general formula (d0) and a resin component (A1) has a structural unit (a0) in which a compound represented by general formula (a0-1) has a polymerizable group within the W.sup.1 portion converted into a main chain (in formula (d0), Rd.sup.01 represents a fluorine atom or a fluorinated alkyl group; In formula (a0-1), W.sup.1 represents a polymerizable group-containing group; C.sup.t represents a tertiary carbon atom, and the α-position of C.sup.t is a carbon atom which constitutes a carbon-carbon unsaturated bond; R.sup.11 represents an aromatic hydrocarbon group; or a chain hydrocarbon group; R.sup.12 and R.sup.13 each independently represents a chain hydrocarbon group, or R.sup.12 and R.sup.13 are mutually bonded to form a cyclic group). ##STR00001##

A positive resist composition comprising a base polymer comprising recurring units (a) of an ammonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and improved dimensional uniformity.

Disclosed is a resin including a structural unit represented by formula (I) and a structural unit represented by formula (a2-A), and a resist composition: ##STR00001## wherein R.sup.1 represents a hydrogen atom or a methyl group; L.sup.1 and L.sup.2 each represent —O— or —S—; s1 represents an integer of 1 to 3; s2 represents an integer of 0 to 3; R.sup.a50 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; R.sup.a51 represents a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, an alkylcarbonyl group or the like; A.sup.a50 represents a single bond or *—X.sup.a51-(A.sup.a52-X.sup.a52).sub.nb—; A.sup.a52 represents an alkanediyl group; X.sup.a51 and X.sup.a52 each represent —O—, —CO—O— or —O—CO—; nb represents 0 or 1; and mb represents an integer of 0 to 4.

A positive resist composition comprising a base polymer comprising recurring units having a nitrogen-containing tertiary ester structure exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity. ##STR00001##

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):

##STR00001##

wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

The present invention relates to a chemically amplified photoresist composition including an alkali-soluble resin including a (meth)acrylate-based resin containing a (meth)acrylate-based repeating unit in which a heterocyclic compound is substituted via a divalent functional group containing an alkylene sulfide having 1 to 20 carbon atoms.