A chemically amplified positive-type photosensitive resin composition with which a resist pattern having a rectangular cross-sectional shape is easily formed, which has satisfactory sensitivity, and which can suppress decomposition of the acid generating agent; a photosensitive dry film having a photosensitive layer including the photosensitive resin composition; a method for producing the photosensitive dry film; a method for producing a patterned resist film using the positive-type photosensitive resin composition; a method for producing a substrate provided with a template using the positive-type photosensitive resin composition; and a method for producing a plated article using the positive-type photosensitive resin composition. The photosensitive resin composition includes an acid generating agent to generate an acid by irradiation with an active ray or radiation, a resin having alkali solubility that increases under action of an acid, and an acid diffusion suppressing agent, wherein the acid generating agent includes a non-ionic acid generating agent that generates sulfonic acid upon the irradiation, and the acid diffusion suppressing agent includes a compound having a specific structure that is decomposed by the irradiation.

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).

Provided is a resist composition which contains a resin (A) and a solvent (B) that contains a compound (B1) represented by general formula (b-1), wherein the content of the active ingredients based on the total amount of the resist composition is 45% by mass or less.

##STR00001##

(In formula (b-1), R.sup.1 represents an alkyl group having from 1 to 10 carbon atoms.)

Provided are: a new sulfonium salt highly photosensitive to active energy ray, in particular, i-line or h-line; and a new photoacid generator which is highly photosensitive to i-line or h-line, and comprises a sulfonium salt that is highly soluble in a solvent and a cationically polymerizable compound such as an epoxy compound, and has excellent storage stability in the formulation. The present invention pertains to a sulfonium salt represented by general formula (1), and a photoacid generator comprising said sulfonium salt.

##STR00001##

A method for producing a composition, the method being for producing a composition using a stirring device provided with a stirring tank and a stirrer, includes a mixing step of charging a resin, an acid generator, and a solvent into the stirring tank, and a stirring step of stirring the mixture accommodated in the stirring tank, using the stirrer, in which a ratio c of a content of the acid generator to a total mass of the mixture is 0.3% to 2.5% by mass, the stirrer is provided with a rotatable stirring shaft, a plurality of support parts attached to the stirring shaft, and a plurality of stirring elements attached to each of end parts of the plurality of support parts, the shape and the arrangement of the stirring elements are specified, and the positions of the plurality of stirring elements are specified so as to satisfy a specific Expression (1).

Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.

An additive for a photoresist, a photoresist composition for a EUV including the same, and a method for manufacturing a semiconductor device using the same, the additive including a copolymer that includes a first repeating unit represented by the following Chemical Formula 1-1, and a second repeating unit represented by the following Chemical Formula 2, wherein a molar ratio of the first repeating unit to the second repeating unit is 7:3 to 2:8,

##STR00001##

A photosensitive resin composition contains polymer (A) having an acid dissociative group, photoacid generator (B), and solvent (C), the solvent (C) containing 80 to 95% by mass of propylene glycol monomethyl ether acetate (C1) and 5 to 18% by mass of 3-methoxybutyl acetate (C2), a content ratio of other solvent (C3) in the solvent (C) being 0 to 10% by mass, and a content ratio of the solvent (C) contained in the photosensitive resin composition being less than 60% by mass.

A monomer has the structure ##STR00001##
wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M.sup.+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.