Provided is a method of forming a pattern and an actinic-ray- or radiation-sensitive resin composition that excels in the limiting resolving power, roughness characteristics, exposure latitude (EL) and bridge defect performance. The method of forming a pattern includes (1) forming an actinic-ray- or radiation-sensitive resin composition into a film, (2) exposing the film to light, and (3) developing the exposed film with a developer containing an organic solvent. The actinic-ray- or radiation-sensitive resin composition contains (A) a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid, and (B) a solvent.

There are provided a method of manufacturing a cured film, including a first exposure step of exposing a part of a photocurable film formed from a photocurable resin composition, a development step of developing the photocurable film after the exposure with a developing solution to obtain a pattern, and a second exposure step of exposing the pattern with light including light having a wavelength different from a wavelength of light used in the first exposure step, where the photocurable resin composition has a specific constitution, a photocurable resin composition that is used in the method of manufacturing the cured film, a method of manufacturing a laminate including the method of manufacturing a cured film, and a method of manufacturing an electronic device, which includes the method of manufacturing the cured film.

An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance. The pattern forming method of the present invention is a pattern forming method including a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a developing step of developing the exposed resist film using a developer, in which the actinic ray-sensitive or radiation-sensitive resin composition contains an acid-decomposable resin represented by a specific structure; and as the developer, a chemical liquid containing an organic solvent, alcohol impurities, and metal impurities containing at least metal atoms is used, the total content of the alcohol impurities being 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid.

A polymer blend, including at least one organic semiconductor (OSC) polymer and at least one photosensitizer, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, wherein the fused thiophene is beta-substituted.

An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance.

The pattern forming method of the present invention is a pattern forming method including a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a developing step of developing the exposed resist film using a developer, in which the actinic ray-sensitive or radiation-sensitive resin composition contains an acid-decomposable resin represented by a specific structure; and as the developer, a chemical liquid containing an organic solvent, alcohol impurities, and metal impurities containing at least metal atoms is used, the total content of the alcohol impurities being 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid.

A photosensitive resin composition capable of reducing residues upon the development thereof, reducing melting flow, and forming a pattern layer having a high taper angle, by containing two or more kinds of different cardo binders; and a display device including a pattern layer containing a polymerization reaction product of the photosensitive resin composition.

An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C., in a case where the chemical liquid contains one kind of the impurity metal, a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt, and in a case where the chemical liquid contains two or more kinds of the impurity metals, a content of each of the impurity metals in the chemical liquid is 0.001 to 100 mass ppt.

A pattern forming method includes a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate, a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of exposing the resist film, and a development step of developing the exposed resist film by using a developer. The chemical liquid contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.

[Problem] To provide a negative type photosensitive composition which is capable of forming a cured film having high resolution and high light shielding properties. [Means for Solution] A negative type photosensitive composition comprising (I) an alkali-soluble resin, (II) a black colorant, (III) a polymerization initiator, and (IV) a solvent, wherein the black colorant (II) has a transmittance ratio represented by [transmittance at the wavelength of 365 nm]/[transmittance at the wavelength of 500 nm] of 1.2 more.

[Problem] To provide a negative type photosensitive composition which can be developed with a low-concentration developer. [Means for Solution] A negative type photosensitive composition comprising (I) an alkali-soluble resin having a carboxyl group, (II) a polymerization initiator, (III) a compound containing two or more (meth)acryloyloxy groups, and (IV) a solvent, wherein the content of the compound containing two or more (meth)acryloyloxy groups is 40 to 300 mass % based on the total mass of the alkali-soluble resin.