The present application provides a display panel and a negative photoresist material. The display panel of the present application includes a photoresist layer, the photoresist layer includes a negative photoresist material, the negative photoresist material includes an acrylate polymer with cage polysilsesquioxanec, The acrylate polymer with cage polysilsesquioxanec is used to improve a thermal performance of the negative photoresist material.

This disclosure relates to process for depositing a conducting metal into a trench or hole, in which the trench or hole is surrounded by a dielectric film. The process includes a) providing a dielectric film; b) depositing a resist layer on top of the dielectric film; c) patterning the resist layer to form a trench or hole using actinic radiation or an electron beam or x-ray; d) transferring the pattern created in the resist layer to the underlying dielectric film by etching; and e) filling the created pattern in the dielectric film with a conducting metal to form a dielectric film having a conducting metal filled trench or a conducting metal filled hole.

Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.

The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

A photosensitive resin composition capable of reducing residues upon the development thereof, reducing melting flow, and forming a pattern layer having a high taper angle, by containing two or more kinds of different cardo binders; and a display device including a pattern layer containing a polymerization reaction product of the photosensitive resin composition.

A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

Provided is a photopolymer composition for hologram recording comprising: a polymer matrix or a precursor thereof; a dye including a compound of the following Chemical Formula 1; a photoreactive monomer; and a photoinitiator,

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Provided is a negative photoresist used for a semiconductor encapsulation process, belonging to the technical field of semiconductor processing. A negative photoresist formulation includes 40-65 wt % of modified epoxy acrylate, 3-6 wt % of photosensitizer, 100-1000 ppm of leveling agent, and the remainder of solvent; the leveling agent is a solution of a 7:3 mass ratio of polydimethylsiloxane copolymer having a molecular weight of 3000-6000 and propylene glycol monomethyl ether acetate. If the negative photoresist is coated at a thickness of about 50 um, the coating uniformity can be controlled to below 5%, ensuring the quality of exposure such that the thickness of electroplated copper meets requirements.

The present disclosure relates to a photopolymer composition, and more particularly, to a compound having a novel structure, a photopolymer composition including the compound as a dye, a hologram recording medium produced from the photopolymer composition, an optical element including the hologram recording medium, and a holographic recording method using the photopolymer composition.

Provided is a precursor for lithographic printing having excellent printing durability and ink repellency as well as high reproducibility of the high definition images. The precursor for lithographic printing includes, at least a heat sensitive layer and an ink repellent layer wherein the ink repellent layer has an elastic modulus of the plate surface under the surface load of 14000 N/m2 of at least 25 MPa and up to 35 MPa.