A method for mask data synthesis and mask making includes calibrating an optical proximity correction (OPC) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated OPC model and the first grid pattern density map of the device layout, and performing an OPC to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated OPC model.

An e-beam lithography process includes the following steps: implanting into a substrate, or into a dielectric layer deposited on the surface of the substrate, electrons in a first pattern; depositing an e-beam resist on the surface of the substrate or of the sacrificial dielectric layer; and exposing the resist by means of an electron beam in a second pattern, then developing the resist; the first and second patterns being made up of elementary patterns, the elementary patterns of the first pattern at least partially surrounding the elementary patterns of the second pattern.

A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

A method of making a grating, the method including: providing a substrate, placing a first photoresist layer on the substrate, locating a second photoresist layer on the first photoresist layer, wherein a second exposure dose of the second photoresist layer is greater than a first exposure dose of the first photoresist layer; exposing the first photoresist layer and the second photoresist layer; developing the first photoresist layer and the second photoresist layer and removing an exposed photoresist to form a patterned photoresist layer and obtain an exposed surface of the substrate, wherein the patterned photoresist layer defines a plurality of top surfaces and a plurality of side surfaces, each adjacent top surface and side surface, and the exposed surface form a Z-type surface; depositing a preformed layer on the Z-type surface to form a Z-type structure; removing the patterned photoresist layer.

A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.

Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer, wherein beamlet control data is generated for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices. The beamlet control data is generated based on design layout data defining a plurality of structures, such as vias, for the electronic devices to be manufactured from the wafer, and selection data defining which of the structures of the design layout data are applicable for each electronic device to be manufactured from the wafer, the selection data defining a different set of the structures for different subsets of the electronic devices. Exposure of the wafer according to the beamlet control data results in exposing a pattern having a different set of the structures for different subsets of the electronic devices.

Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.

Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer, wherein beamlet control data is generated for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices. The beamlet control data is generated based on design layout data defining a plurality of structures, such as vias, for the electronic devices to be manufactured from the wafer, and selection data defining which of the structures of the design layout data are applicable for each electronic device to be manufactured from the wafer, the selection data defining a different set of the structures for different subsets of the electronic devices. Exposure of the wafer according to the beamlet control data results in exposing a pattern having a different set of the structures for different subsets of the electronic devices.

A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.