Generally, examples described herein relate to systems and methods for processing a substrate, and more particularly, for removing an edge bead or other source of contamination from an edge of a substrate. An example is a processing system including a chamber, a substrate handler within the chamber, and a radiation generator within the chamber. The substrate handler is configured to secure a substrate. The substrate handler is operable to position an edge surface of the substrate such that radiation propagating from the radiation generator is directed to the edge surface of the substrate, and operable to position a periphery region of a deposit surface of the substrate that is perpendicular to and along the edge surface such that radiation propagating from the radiation generator is directed to the periphery region.

A method for fabricating a semiconductor device, includes dividing a pattern region of a desired pattern that is to be formed on a semiconductor substrate into a plurality of sub-regions; calculating combination condition including a shape of illumination light for transferring and a mask pattern obtained by correcting a partial pattern in the sub-region of the desired pattern formed on a mask used during transferring for each of the plurality of sub-regions, to make a dimension error of the partial pattern of each of the plurality of sub-regions smaller when transferred to the semiconductor substrate; and forming the desired pattern by making multiple exposures on the semiconductor substrate in such a way that the partial patterns of the sub-regions divided are sequentially transferred by transferring a pattern to the semiconductor substrate using the combination conditions calculated for each of the sub-regions.

A photomask including a photomask body having a surface on which a mask pattern is formed and to be scanned and subjected to pattern transfer to a resist through a lens assembly including a connecting portion and a non-connecting portion. The mask pattern has a first region subjected to the pattern transfer at the connecting portion of the lens assembly and a second region subjected to the pattern transfer at the non-connecting portion. The mask pattern has, in at least one of the first and second regions, a corrected line width which is adjusted by calculation such that the resist is to have a target line width as designed. The corrected line width has a stepwise change in at least one of a scanning direction and a direction orthogonal to the scanning direction. The stepwise change is made by including a correction component based on a random number.

The instant disclosure includes an implanting apparatus and a method thereof. The implanting apparatus has a chuck configured to carry a substrate is rotated a number of times at an angle during ion implantation. In this way, masks used during semiconductor fabrication is reduced.

Generally, examples described herein relate to systems and methods for processing a substrate, and more particularly, for removing an edge bead or other source of contamination from an edge of a substrate. An example is a processing system including a chamber, a substrate handler within the chamber, and a radiation generator within the chamber. The substrate handler is configured to secure a substrate. The substrate handler is operable to position an edge surface of the substrate such that radiation propagating from the radiation generator is directed to the edge surface of the substrate, and operable to position a periphery region of a deposit surface of the substrate that is perpendicular to and along the edge surface such that radiation propagating from the radiation generator is directed to the periphery region.

Disclosed herein is a full-size mask assembly and a manufacturing method thereof. The full-size mask assembly according to an embodiment of the present invention includes a frame having a frame opening formed therein and a support surrounding the frame opening, a structural auxiliary mask supported by the support and having a plurality of shafts in a grid shape to form a plurality of structural auxiliary mask openings, and a plurality of cell unit masks supported by the structural auxiliary mask and each of which has a deposition pattern portion through which a deposition material passes.

This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

An electron beam irradiation apparatus includes a first electrode being annular, arranged along the optical axis of the electron beam, at the downstream from the deflector, and in the magnetic field of the objective lens, to which a first potential being positive is variably applied, a second electrode being annular, arranged in the magnetic field of the objective lens and between the deflector and the first electrode, to which a second potential being positive and higher than the first potential is applied, and a third electrode being annular, arranged in the magnetic field of the objective lens and to be opposite to the second electrode with respect to the first electrode, to which a third potential lower than the first potential is applied.

A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

A lithography apparatus is provided. The lithography apparatus a reticle having a first surface and a second surface facing each other, and a pattern region formed on the first surface, a reticle stage facing the second surface of the reticle, the reticle stage to chuck the reticle, a protection conductor within a chamber housing the reticle and the reticle stage; and a power source to supply a voltage to the protection conductor.