A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores a treatment liquid for manufacturing a semiconductor, and the treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms and a total content of particulate metal is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.

A resist composition containing a base material component and a compound represented by General Formula (d0), in which in the formula, Rd.sup.0 represents a condensed cyclic group containing a condensed ring containing at least one aromatic rings, the condensed cyclic group having, as a substituent, an acid decomposable group which is decomposed under action of acid to form a polar group, Yd.sup.0 represents a divalent linking group or a single bond, M.sup.m+ represents an m-valent organic cation, and m represents an integer of 1 or more

##STR00001##

A composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23° C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.

A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

The present invention provides a resin composition which is highly sensitive and exhibits high chemical resistance even in the case of being baked at a low temperature of 250° C. or less and can suppress the generation of outgas after curing. The present invention is a resin composition which contains (a) an alkali-soluble resin containing polyimide, polybenzoxazole, polyamide-imide, a precursor of any one of these compounds and/or a copolymer of these compounds and (b) an alkali-soluble resin having a monovalent or divalent group represented by the following general formula (1) in a structural unit and in which the modification rate of a phenolic hydroxyl group in the alkali-soluble resin (b) is 5% to 50%. ##STR00001##
(In general formula (1), O represents an oxygen atom. R.sup.1 represents a hydrogen atom or a hydrocarbon group which has 1 to 20 carbon atoms and may be substituted and R.sup.2 represents an alkyl group having 1 to 5 carbon atoms. s and t each independently represent an integer from 0 to 3. Provided that (s+t)≥1. d represents an integer from 0 to 2. u represents an integer from 1 to 2, and * represents a chemical bond.)

Provided are a salt capable of producing a resist pattern with satisfactory CD Uniformity (CDU), an acid generator, and a resist composition. Disclosed are a salt represented by formula (I), an acid generator, and a resist composition:

##STR00001##

wherein, in formula (I), R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8 and R.sup.9 each represent a halogen atom, a haloalkyl group, etc.; A.sup.1, A.sup.2 and A.sup.3 each represent a hydrocarbon group, etc.; m1 and m4, m5, m6 and m7 represent an integer of 0 to 5, m2, m3, m8 and m9 represent an integer of 0 to 4, 0≤m1+m7≤5, 0≤m2+m8≤4, 0≤m3+m9≤4, and at least one of m1, m2 and m3 represents an integer of 1 or more; X.sup.4 represents a single bond, —CH.sub.2—, —O—, —S—, —CO—, —SO— or —SO.sub.2—; and AI.sup.− represents an organic anion.

[Object] To provide a negative type photosensitive composition developable with a low concentration alkali developer and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability; and further to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type photosensitive composition comprising: (I) an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit, (II) a polysiloxane, (III) a compound having two or more (meth)acryloyloxy groups, (IV) (i) a silicone derivative having a particular structure and/or (ii) a compound having two or more epoxy groups, (V) a polymerization initiator, and (VI) a solvent.