A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):

##STR00001##

wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

A photoresist film is patterned into an array of island shapes with improved critical dimension uniformity and no phase edges by using two alternating phase shifting masks (AltPSMs) and one post expose bake (PEB). The photoresist layer is exposed with a first AltPSM having a line/space (L/S) pattern where light through alternating clear regions on each side of an opaque line is 180° phase shifted. Thereafter, there is a second exposure with a second AltPSM having a L/S pattern where opaque lines are aligned orthogonal to the lengthwise dimension of opaque lines in the first exposure, and with alternating 0° and 180° clear regions. Then, a PEB and subsequent development process are used to form an array of island shapes. The double exposure method enables smaller island shapes than conventional photolithography and uses relatively simple AltPSM designs that are easier to implement in production than other optical enhancement techniques.

Provided is a compound that can be used as a base resin for a photosensitive resin composition. The photosensitive resin can form a fine pattern and can achieve high resolution without impairing mechanical strength and solubility. The compound is represented by the general formula (1): ##STR00001##
wherein Z represents a linear, branched or cyclic divalent hydrocarbon group having 2 to 30 carbon atoms; X.sup.1 to X.sup.3 represent any of —CO.sub.2—, —CONR.sup.X1—, —O—, —NR.sup.X1—, —S—, —SO.sub.2—, —SO.sub.3— and —SO.sub.2NR.sup.X1— and may be the same as or different from each other, provided that R.sup.X1 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms; Ar represents a divalent aromatic group having 2 to 30 carbon atoms; L.sup.1 and L.sup.2 independently represent a divalent hydrocarbon group having 1 to 30 carbon atoms; and x and y are each independently 0 or 1.

A photosensitive resin composition contains polymer (A) having an acid dissociative group, photoacid generator (B), and solvent (C), the solvent (C) containing 80 to 95% by mass of propylene glycol monomethyl ether acetate (C1) and 5 to 18% by mass of 3-methoxybutyl acetate (C2), a content ratio of other solvent (C3) in the solvent (C) being 0 to 10% by mass, and a content ratio of the solvent (C) contained in the photosensitive resin composition being less than 60% by mass.

A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition. ##STR00001##

A layered structure including a luminescent layer including a quantum dot polymer composite pattern; an inorganic layer disposed on the luminescent layer, the inorganic layer including a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof; and an organic layer being disposed between the luminescent layer and the inorganic layer, the organic layer including an organic polymer, a method of producing the same, and a liquid crystal display including the same. The quantum dot polymer composite pattern includes a repeating section including a polymer matrix; and a plurality of quantum dots (e.g., dispersed) in the polymer matrix, the repeating unit including a first section configured to emit light of a first light, and wherein the inorganic layer is disposed on at least a portion of a surface of the repeating section.

Provided is a compound having one or more halogens and an unsaturated double bond. Provided is a method for producing an iodine-containing vinyl monomer comprising: a) a step of providing an iodine-containing alcohol substrate having a general structure represented by the formula (1-1):

##STR00001##

(the definitions of the variables in the formula (1-1) are as described in the specification); and b) a step of dehydrating the iodine-containing alcohol substrate to obtain the iodine-containing vinyl monomer having a general structure represented by the formula (1):

##STR00002##

(the definitions of the variables in the formula (1) are as described in the specification).

Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.