The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

A resist composition that generates an acid upon exposure and has solubility in a developing solution, which is changed by action of an acid, the resist composition containing a resin component having a constitutional unit represented by General Formula (a01-1) and a constitutional unit represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax.sup.01 represents a linking group; Ax represents a sulfonyl group or a sulfoxide group; Rax.sup.01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group; s0 and v0 represent an integer of 0 to 6; and 1≤s0+v0≤6 and u0≤s0+v0. In General Formula (a02-1), Ra.sup.00 represents an acid-dissociable group represented by General Formula (a02-r2-1) ##STR00001##

Lithographic printing plates are provided by imagewise exposing negative-working lithographic printing plate precursors having one or more radiation-sensitive imageable layers, followed by contacting with a processing solution that contains up to 10 weight % of one or more compounds represented by Structure (I) shown as follows:
R.sup.1—C(═O)—N(R.sup.2)—R.sup.3   (I)
wherein R.sup.1, R.sup.2, and R.sup.3 independently represent hydrogen or a substituted or unsubstituted hydrocarbon group, or two or three of R.sup.1, R.sup.2, and R.sup.3 are combined to form one or more cyclic rings, and the total number of carbon atoms in the Structure (I) molecule is at least 7 and up to and including 33. Both negative-working and positive-working lithographic precursors can be imaged and processed using this processing solution using one or more successive applications of the same or different processing solution. The processing solution can be derived from a corresponding processing solution concentrate that can also be used for replenishment.

A positive resist composition is provided comprising a base polymer comprising repeat units (a) having two triple bonds and repeat units (b) adapted to increase solubility in an alkaline developer under the action of acid. A pattern of good profile with a high resolution, reduced LWR, and improved CDU is formed therefrom.

An onium salt consisting of an anion containing an iodized aromatic group and two sulfonate groups and a sulfonium or iodonium cation is a useful photoacid generator. A chemically amplified resist composition comprising the photoacid generator forms a pattern of rectangular profile with a good balance of sensitivity, CDU, LWR, MEF, and DOF when it is processed by photolithography using high-energy radiation.

A composition for resist underlayer film formation, includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R.sup.1s are identical or different from each other, and wherein a sum of a and b is no greater than 3.

##STR00001##

A method for manufacturing semiconductor elements by a metal lift-off process and a semiconductor element manufactured thereby, include steps of photoresist-coating, exposing, developing, metal-coating, and lift-off. A photoresist layer can be removed with a photoresist stripper. Meanwhile, the metal on the top of the photoresist layer can also be removed when the photoresist layer is removed. The circuit layout required for the semiconductor element can thus be completed without an etching process. In addition, by setting the process parameters, the contour of the photoresist layer can present a certain angle, so that the metal on the surface of the photoresist layer can be completely removed, which saves costs and improves competitiveness.

Provided is a novel composition for forming a resist underlayer film. This composition for forming a resist underlayer film includes a polymer (X) and a solvent, the polymer (X) containing: a plurality of structural units which are the same as or different from each other and have a methoxymethyl group and a ROCH2- group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) other than the methoxymethyl group; and a linking group that links the more than one structural unit.