An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P) having a partial structure represented by General Formula (X), and a compound capable of generating an acid upon irradiation with actinic ray or radiation. ##STR00001##

A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W.sub.1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material. ##STR00001##

A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: ##STR00001## The second ligands each have a following structure: ##STR00002##
represents the core group. L′ represents a chemical that includes 0˜2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1˜6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1˜6 carbon atoms saturated by H. L′″ represents a chemical that includes 1˜6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L′″ together.

A pattern forming method includes the following steps (a) to (d): (a) applying an actinic ray-sensitive or radiation-sensitive resin composition including a resin capable of increasing a polarity by the action of an acid onto a substrate to form a resist film, (b) forming an upper layer film on the resist film, (c) exposing the resist film having the upper layer film formed thereon, and (d) developing the exposed resist film using an organic developer to form a pattern, in which the resin capable of increasing the polarity by the action of an acid includes an acid-decomposable repeating unit having an acid-leaving group a having 4 to 7 carbon atoms, and the maximum value of the number of carbon atoms and the protection rate of the acid-leaving group a satisfy specific conditions.

A resist composition comprising a base polymer and a sulfonium salt of iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.

Provided is a composition for forming an organic anti-reflective coating layer used in a negative tone development, which not only enhance an adhesion to a photoresist while having a high refractive index and a high etch rate but also improve a pattern profile of undercut etc. The composition an isocyanurate compound containing at least one moiety which is represented by Formula 2; a polymer represented by Formula 3 and an organic solvent for dissolving the above-mentioned components.

##STR00001##

Here we disclose a lithographic pattern development process for amorphous fluoropolymers. Amorphous fluoropolymers are a class of plastic materials with high chemical inertness and favorable optical properties. Exposure of surface-deposited layers of such polymer with high energy radiation leads to a change in the chemical structure of the polymer, which selectively compromises the solubility of the exposed areas in fluorinated organic solvents. Micro- and nanopatterning with a feature size down to <50 nm was achieved by dissolving and removing unexposed amorphous fluoropolymer from exposed, surface deposited films. The amorphous fluoropolymer functions thus as a negative resist.

An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition by which a pattern having excellent LWR performance can be formed. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition.

The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition including a resin of which polarity increases through decomposition by the action of an acid, and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin has a repeating unit represented by General Formula (1) as a repeating unit having an acid-decomposable group, and the compound that generates an acid upon irradiation with actinic rays or radiation includes any one or more of a compound (I) or a compound (II).

Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator, the resin having an acid-labile group including at least one selected from the group consisting of a structural unit represented by formula (a1-1) and a structural unit represented by formula (a1-2): ##STR00001##

There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.