The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition onto a substrate having an uneven pattern, and thereafter subjecting the substrate to a vibration treatment, and after or simultaneously with the vibration treatment, insolubilizing the coating film to an organic solvent to form the organic film. This provides a method for forming an organic film that can fill an uneven pattern on a substrate to highly flatten a substrate at low cost in a production step of a semiconductor apparatus, etc.

In a resist pattern forming process, a rinse solution comprising (A) a heat/acid-decomposable polymer and (B) an organic solvent is effective. The pattern forming process using the rinse solution is successful in forming fine feature size patterns while minimizing the occurrence of pattern collapse.

Compositions including hard magnetic photoresists, soft photoresists, hard magnetic elastomers and soft magnetic elastomers are provided.

A monomer having an onium salt structure represented by formula (1) gives a polymer which is fully compatible with resist components. A resist composition comprising the polymer has advantages including reduced acid diffusion, high sensitivity, high resolution, a good balance of lithography properties, and less defects, and is quite effective for precise micropatterning.

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The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group which decomposes by the action of an acid represented by the following General Formula (1), a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device. ##STR00001##

A resist composition containing a resin component having a structural unit containing a group which is dissociated under the action of an acid and compound represented by the general formula (bd1). In the formula (bd1), Rx.sup.1 to Rx.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Ry.sup.1 to Ry.sup.2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, and Rz.sup.1 to Rz.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1 to Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anion group, the entire anion moiety may be an n-valent anion, and M.sup.m+ represents an m-valent organic cation ##STR00001##

Provided is a photosensitive resin composition that contains (A) a photobase generator and (B) an alkali-soluble epoxy compound, wherein the photobase generator (A) contains a compound represented by formula (2-1) and the alkali-soluble in epoxy compound (B) is an epoxy compound obtained by reacting (c) a polybasic acid anhydride with a product of a reaction between (a) an epoxy compound having two or more epoxy groups in the molecule and (b) a compound having one or more by hydroxyl groups and one carboxyl group in the molecule.

##STR00001##

A compound having a group represented by the formula (Ia): ##STR00001##
wherein R.sup.1 represents a C.sub.1 to C.sub.8 fluorinated alkyl group, R.sup.2 represents a group having an optionally substituted C.sub.5 to C.sub.18 alicyclic hydrocarbon group, and * represents a binding site.

Disclosed herein are an organic processing liquid for resist film patterning which is capable of suppressing the occurrence of defects in resist patterns, and a pattern forming method. Provided is an organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid including an organic solvent, in which the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

A method of patterning a device includes forming a fluorinated photopolymer layer over a device substrate. The photopolymer layer has a lower portion proximate the device substrate and an upper portion distal the device substrate. The fluorinated photopolymer layer includes a radiation-absorbing dye and a fluorinated photopolymer having a solubility-altering reactive group. The photopolymer layer is exposed to patterned radiation to form exposed and unexposed areas in accordance with the patterned radiation and a developed structure is formed by removing unexposed areas using a developing agent that includes a first fluorinated solvent. The lower portion of the exposed area of the photopolymer layer has a dissolution rate in the developing agent that is at least 5 times higher than a dissolution rate for the upper portion.