A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

A photoresist stripping composition comprising an organic amine and a method is provided. The photoresist stripping composition comprising an organic amine having the following formula (1).

##STR00001##

A method for manufacturing semiconductor elements by a metal lift-off process and a semiconductor element manufactured thereby, include steps of photoresist-coating, exposing, developing, metal-coating, and lift-off. A photoresist layer can be removed with a photoresist stripper. Meanwhile, the metal on the top of the photoresist layer can also be removed when the photoresist layer is removed. The circuit layout required for the semiconductor element can thus be completed without an etching process. In addition, by setting the process parameters, the contour of the photoresist layer can present a certain angle, so that the metal on the surface of the photoresist layer can be completely removed, which saves costs and improves competitiveness.

A processing solution composition for reducing micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, and 98 to 99.9998 wt % of water, reduces the number of micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source, and has a low LWR (Line Width Roughness) value, thus effectively improving the uniformity of the pattern.

Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.

A first object of the present invention is to provide a method of manufacturing a conductive substrate having a low defect ratio. In addition, a second object of the present invention is to provide a conductive substrate that is obtained using the method of manufacturing a conductive substrate. In addition, a third object of the present invention is to provide a touch sensor, an antenna, and an electromagnetic wave shielding material that include the conductive substrate.

The method of manufacturing a conductive substrate is a method of manufacturing a conductive substrate including a substrate and a patterned conductive layer that is disposed on the substrate, the method including: a step X1, a step X2, a step X3, a step X4, a step X6, a step X7, and a step X8 in this order, in which in the step X4, a photosensitive resin layer is substantially insoluble in a conductive composition.

A composition comprising a) a quaternary trialkylalkanolamine hydroxide and b) at least one diamine as component b), which is selected from the group consisting of 1-amino-4-methylpiperazine, 1,2-diaminopropane and mixtures thereof.

This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

In the case of an embossing lacquer based on a UV-polymerizable prepolymer composition containing at least one acrylate monomer, the prepolymer composition—in addition to the acrylate monomer—contains at least one thiol selected from the group: 3-Mercaptopropianates, mercaptoacetates, thioglycolates, and alkylthiols as well as potentially a surface-active anti-adhesive additive selected from the group of anionic surfactants, such as polyether siloxanes, fatty alcohol ethoxylates, such as polyoxyethylene (9) lauryl ethers, monofunctional alkyl (meth)acrylates, polysiloxane (meth)acrylates, perfluoroalkyl (meth)acrylates, and perfluoropolyether (meth)acrylates as well as a photoinitiator, as well as a method for imprinting substrate surfaces coated with an embossing lacquer.

A cleaning solution includes a solvent having Hansen solubility parameters: 25>δ.sub.d>13, 25>δ.sub.p>3, 30>δ.sub.h>4; an acid having an acid dissociation constant pKa: −11<pKa<4, or a base having pKa of 40>pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from

##STR00001##

R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from —OH, ═O, —S—, —P—, —P(O.sub.2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO.sub.2OH, —SO.sub.2SH, —SOH, —SO.sub.2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO.sub.3NH—, and SO.sub.2NH.