A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10.sup.—12 to 10.sup.−4. A method for washing a substrate and a method for removing a resist use the treatment liquid.

A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of —(-0-CH.sub.2—CH.sub.2—).sub.n, —OH, —OH, and -0-C(═O)—CH.sub.3, wherein n′ is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group. The invention also relates to such compositions also containing a surfactant component, and also pertains to the process of using either of these compositions as a resist remover. ##STR00001##
Dipropylene glycol monomethyl ether (III), ##STR00002##

Methods for treating substrates are described. The methods comprise the steps of flowing an aqueous liquid medium through a flow channel and at least one outlet slit onto a substrate to be treated and exposing the aqueous liquid medium to UV-radiation of a specific wavelength at least in a portion of the flow channel immediately adjacent the at least one outlet slit and after the aqueous liquid medium has flown through the outlet opening towards the substrate and thus prior to and while applying the aqueous liquid medium to the surface of the substrate to be treated. In one method, the electrical conductance of the aqueous liquid medium is adjusted to be in the range of 20 to 2000 μS, by the addition of an additive to the aqueous liquid medium, the aqueous liquid medium prior to the addition of the additive having an electrical conductivity below 20 μS, prior to or while exposing the same to the UV-radiation. Additionally, the pH of the aqueous liquid medium may be adjusted to a range of 8 to 11 or 3 to 6 prior to or while exposing the same to the UV-radiation. The adjustments may lead to a shift in an equilibrium of reactive species generated in the aqueous liquid medium by the UV-radiation towards preferred species.

A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.

This invention relates to a photoresist stripper composition. The photoresist stripper composition according to the present invention comprises at least one choline compound; at least one polar aprotic solvent; and water; the weight percentage of the choline compound is from 2.5 to 50%, preferably from 5 to 50%, more preferably from 7 to 30%, and most preferably from 9 to 18% by weight based on the total weight of the composition. The photoresist stripper composition according to the present invention exhibits excellent photoresist cleaning performance and low etching to the substrate.

The present application discloses a manufacturing method of a display panel and a display panel. The manufacturing method includes the steps: forming a color filter layer on a substrate; confirming a color filter-to-be-stripped in the color filter layer; and stripping the color filter-to-be-stripped by using a selected stripping liquid; the color filter layer includes a first color filter, a second color filter and a third color filter; and the color filter-to-be-stripped includes one or two of the first color filter, the second color filter and the third color filter, and the method of stripping the color filter-to-be-stripped by the selected stripping liquid includes: letting the color filter-to-be-stripped react with the selected stripping liquid, and stripping the color filter-to-be-stripped by the selected stripping liquid, and forming a protective layer on the surface of the color filters except the color filter-to-be-stripped.

The present disclosure relates to a process solution composition for EUV photolithography and a pattern forming method using same. The process solution composition includes 0.00001% to 0.01% by weight of a fluorine-based surfactant, 0.00001% to less than 0.01% by weight of a pattern reinforcing agent represented by Formula (1), and 0.00001% to 0.001% by weight of a material selected from the group consisting of triol derivatives, tetraol derivatives, and mixture thereof, and the balance being water.

The present disclosure is directed to a method of cleaning a microelectronic substrate, such as a semiconductor device, by contacting the microelectronic substrate with an amine oxide selected from the group consisting of N,N-dimethylethanolamine N-oxide, triethanolamine N-oxide, ethanamine, 2,2′-oxybis[N,N-dimethyl-,N,N′-dioxide], 1-methylpyrrolidine N-oxide, N,N-dimethylcyclohexylamine N-oxide, and a mixture thereof for a time and at a temperature sufficient to clean the substrate.