The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I): ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.

A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

Compositions and methods useful for removing residue and photoresist from a semiconductor substrate comprising: from about 5 to about 60% by wt. of water; from about 10 to about 90% by wt. of a water-miscible organic solvent; from about 5 to about 90% by wt. of at least one alkanolamine; from about 0.05 to about 20% by wt. of at least one polyfunctional organic acid; and from about 0.1 to about 10% by wt. of at least one phenol-type corrosion inhibitor, wherein the composition is substantially free of hydroxylamine.

This disclosed and claimed subject matter relates to a post etch residue cleaning compositions that include an alkanolamine having two or more or more than two alkanol groups, an alpha-hydroxy acid and water as well as methods for use thereof in microelectronics manufacturing.

A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.

A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.

A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.

A resist composition is provided comprising a base polymer and a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of an iodized aromatic group-containing N-carbonysulfonamide. The salt is effective for sensitizing and suppressing acid diffusion and prevents any film thickness loss after development. The resist composition is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography.

The present application provides a backplane unit, a manufacturing method thereof, and a display device. The manufacturing method includes the following steps: forming a photoresist layer on an array substrate, wherein the array substrate comprises a substrate, an array layer, and a light-emitting element, the array layer is formed on the substrate, the light-emitting element is disposed on the array layer, and the photoresist layer is formed on a side of the array layer and the light-emitting element away from the substrate; performing exposure on at least a portion of the photoresist layer corresponding to the light-emitting element; forming a light-shielding layer on at least a side of the photoresist layer away from the array substrate, wherein the light-shielding layer exposes at least a side portion of the light-emitting element; and laterally stripping the photoresist layer on the light-emitting element with a stripping solution to obtain the backplane unit.