An illumination optical apparatus illuminates a pattern on a mask with illumination light. The illumination optical apparatus includes an optical integrator arranged in an optical path of the illumination light, a deflecting member arranged in the optical path on an incidence side of the optical integrator, which deflects the illumination light, a lens element arranged in the optical path between the deflecting member and the optical integrator, which distributes the illumination light in a region, on a pupil plane of the illumination optical apparatus, away from an optical axis of the illumination optical apparatus, and a polarization member arranged in the optical path between the lens element and the optical integrator, which changes a polarization state of the illumination light so that a polarization direction of the illumination light in the region is substantially coincident with a circumferential direction about the optical axis.

A metrology system having an optical measurement system serves to simulate illumination and imaging properties of an optical production system when an object is illuminated and imaged. The optical measurement system has an illumination optical unit serving to illuminate the object and having a pupil stop in the region of an illumination pupil in a pupil plane, and an imaging optical unit for imaging the object in an image plane. At least one pupil stop for specifying a plurality of measurement illumination settings created by displacing the pupil stop in the pupil plane is provided within the scope of the simulation method. Measurement aerial images are recorded in the image plane for various displacement positions of the object perpendicular to the object plane with the various measurement illumination settings. The various measurement illumination settings are specified by displacing the pupil stop. A complex mask transfer function is reconstructed from the recorded measurement aerial images. A 3-D aerial image of the optical production system is determined from the reconstructed mask transfer function and a given illumination setting of the optical production system as the result of the simulation method. The reconstruction includes the fact that profiles of stop edges of the at least one pupil stop which effectively act to specify the respective measurement illumination setting are changed in a manner going beyond a pure displacement of the stop edge when the respective measurement illumination setting is specified on the basis of the displacement position of the pupil stop. This results in an improvement of the simulation method.

An imaging optical unit for EUV projection lithography serves to image an object field into an image field. Mirrors guide imaging light from the object field to the image field. An aperture stop is tilted by at least 1 in relation to a normal plane which is perpendicular to an optical axis. The aperture stop has a circular stop contour. In mutually perpendicular planes, a deviation of a numerical aperture NA.sub.x measured in one plane from a numerical aperture NA.sub.y measured in the other plane is less than 0.003, averaged over the field points of the image field. What emerges is an imaging optical unit, in which homogenization of an image-side numerical aperture is ensured so that an unchanging high structure resolution in the image plane is made possible, independently of an orientation of a plane of incidence of the imaging light in the image field.

An imaging optical unit for EUV projection lithography serves to image an object field into an image field. Mirrors guide imaging light from the object field to the image field. An aperture stop is tilted by at least 1 in relation to a normal plane which is perpendicular to an optical axis. The aperture stop has a circular stop contour. In mutually perpendicular planes, a deviation of a numerical aperture NA.sub.x measured in one plane from a numerical aperture NA.sub.y measured in the other plane is less than 0.003, averaged over the field points of the image field. What emerges is an imaging optical unit, in which homogenization of an image-side numerical aperture is ensured so that an unchanging high structure resolution in the image plane is made possible, independently of an orientation of a plane of incidence of the imaging light in the image field.

An exposure method and apparatus for illuminating a pattern with an illumination system to expose a substrate through a projection system. The pattern is illuminated with illumination light with a light amount distribution in which an amount of light is larger in a pair of first areas and a pair of second areas than in an area other than the first and second areas on a pupil plane of the illumination system. The pair of the first areas being arranged outside an optical axis, the pair of the second areas being arranged on ten same straight line as the pair of the first areas are arranged on, and the pair of the second areas being arranged outside the pair of the first areas.

An illumination optical apparatus illuminates a pattern on a mask with illumination light. The illumination optical apparatus includes an optical integrator, a polarization member arranged in an optical path of the illumination light on an incidence side of the optical integrator, which changes a polarization state of the illumination light, and a distribution changing member arranged in the optical path between the polarization member and the optical integrator, which can change a light amount distribution of the illumination light on a pupil plane of the illumination optical apparatus. The polarization member changes the polarization state of the illumination light so that a polarization direction of the illumination light, which is distributed away from an optical axis of the illumination optical apparatus on the pupil plane, is substantially coincident with a circumferential direction about the optical axis on the pupil plane.

An imaging optical system for a projection exposure system has at least one anamorphically imaging optical element. This allows a complete illumination of an image field in a first direction with a large object-side numerical aperture in this direction, without the extent of the reticle to be imaged having to be enlarged and without a reduction in the throughput of the projection exposure system occurring.

An exposure method and apparatus for illuminating a pattern with an illumination system to expose a substrate through a projection system. The pattern is illuminated with illumination light with a light amount distribution in which an amount of light is larger in a pair of first areas and a pair of second areas than in an area other than the first and second areas on a pupil plane of the illumination system. The pair of the first areas being arranged outside an optical axis, the pair of the second areas being arranged on ten same straight line as the pair of the first areas are arranged on, and the pair of the second areas being arranged outside the pair of the first areas.

The illumination optical system for illuminating an illumination target surface with light from a light source is provided with a polarization converting member which converts a polarization state of incident light to form a pupil intensity distribution in a predetermined polarization state on an illumination pupil of the illumination optical system; and a phase modulating member which is arranged in the optical path on the illumination target surface side with respect to the polarization converting member and which transmits light from the pupil intensity distribution so as to convert linearly polarized light thereof polarized in a first direction, into required elliptically polarized light and maintain a polarization state of linearly polarized light polarized in a second direction (X-direction or Y-direction) obliquely intersecting with the first direction, in order to reduce influence of retardation caused by a subsequent optical system between the polarization converting member and the illumination target surface.

An imaging optical unit for EUV projection lithography serves to image an object field into an image field. Mirrors guide imaging light from the object field to the image field. An aperture stop is tilted by at least 1 in relation to a normal plane which is perpendicular to an optical axis. The aperture stop has a circular stop contour. In mutually perpendicular planes, a deviation of a numerical aperture NA.sub.x measured in one plane from a numerical aperture NA.sub.y measured in the other plane is less than 0.003, averaged over the field points of the image field. What emerges is an imaging optical unit, in which homogenization of an image-side numerical aperture is ensured so that an unchanging high structure resolution in the image plane is made possible, independently of an orientation of a plane of incidence of the imaging light in the image field.