An extreme ultraviolet light condensation mirror may include a reflective surface formed in a concave shape and configured to diffract a laser beam incident from a first focal point and having a wavelength longer than a wavelength of extreme ultraviolet light. The reflective surface may be provided with a plurality of first reflection portions, a plurality of second reflection portions, a plurality of first stepped portions, and a plurality of second stepped portions. The first and second stepped portions may have such heights that the laser beam obtains phases opposite to each other through reflection at the first and second reflection portions adjacent to each other. The height of each first stepped portion may be equal to or higher than the height of each second stepped portion. The height of at least one of the first stepped portions may be higher than the height of each second stepped portion.

A maskless, extreme ultraviolet (EUV) lithography scanner uses an array of microlenses, such as binary-optic, zone-plate lenses, to focus EUV radiation onto an array of focus spots (e.g. about 2 million spots), which are imaged through projection optics (e.g., two EUV mirrors) onto a writing surface (e.g., at 6X reduction, numerical aperture 0.55). The surface is scanned while the spots are modulated to form a high-resolution, digitally synthesized exposure image. The projection system includes a diffractive mirror, which operates in combination with the microlenses to achieve point imaging performance substantially free of geometric and chromatic aberration. Similarly, a holographic EUV lithography stepper can use a diffractive photomask in conjunction with a diffractive projection mirror to achieve substantially aberration-free, full-field imaging performance for high-throughput, mask-projection lithography. Maskless and holographic EUV lithography can both be implemented at the industry-standard 13.5-nm wavelength, and could potentially be adapted for operation at a 6.7-nm wavelength.

Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system includes a radiation source. The radiation source includes a grating structure operable to suppress the zeroth order of reflected radiation for at least a first component wavelength. The grating structure has a periodic profile including regularly spaced structures providing three surface levels, such that radiation diffracted by the grating structure includes radiation of three phases which destructively interfere for at least the zeroth order of the reflected radiation for the first component wavelength. The grating structure is on a radiation collector within the source.

An optical diffraction component is configured to suppress at least one target wavelength by destructive interference. The optical diffraction component includes at least three diffraction structure levels that are assignable to at least two diffraction structure groups. A first of the diffraction structure groups is configured to suppress a first target wavelength λ.sub.1. A second of the diffraction structure groups is configured to suppress a second target wavelength λ.sub.2, where (λ.sub.1−λ.sub.2).sup.2/(λ.sub.1+λ.sub.2).sup.2<20%. A topography of the diffraction structure levels can be described as a superimposition of two binary diffraction structure groups. Boundary regions between adjacent surface sections of each of the binary diffraction structure groups have a linear course and are superimposed on one another at most along sections of the linear course.

A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.

A beam-splitting apparatus arranged to receive an input radiation beam and split the input radiation beam into a plurality of output radiation beams. The beam-splitting apparatus comprising a plurality of reflective diffraction gratings arranged to receive a radiation beam and configured to form a diffraction pattern comprising a plurality of diffraction orders, at least some of the reflective diffraction gratings being arranged to receive a 0.sup.th diffraction order formed at another of the reflective diffraction gratings. The reflective diffraction gratings are arranged such that the optical path of each output radiation beam includes no more than one instance of a diffraction order which is not a 0.sup.th diffraction order.

A mirror for an illumination optical unit of a projection exposure apparatus comprises a spectral filter in the form of a grating structure, wherein the grating structure has a maximum edge steepness in the range of 15° to 60°.

Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.

The invention relates to a device for determining the exposure energy during the exposure of an element in an optical system, in particular for microlithography, comprising an optical element, a diffractive structure which has a locally varying grating period, and an intensity sensor arrangement, wherein electromagnetic radiation diffracted at the diffractive structure during operation of the optical system, in at least one order of diffraction, is directed to the intensity sensor arrangement by way of total internal reflection effected in the optical element.

The disclosure relates to a method for producing an illumination system for an EUV apparatus in and to an illumination system for an EUV apparatus.