A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.

A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

A method for determining an input to a lens model to determine a setpoint for manipulation of a lens of a lithographic apparatus when addressing at least one of a plurality of fields of a substrate, the method including: receiving parameter data for the at least one field, the parameter data relating to one or more parameters of the substrate within the at least one field, the one or more parameters being at least partially sensitive to manipulation of the lens as part of an exposure performed by the lithographic apparatus; receiving lens model data relating to the lens; and determining the input based on the parameter data and on the lens model data.

The present application discloses a dose mapper method, which includes: step 1: collecting critical dimension fingerprint of each tool and each mask and storing the critical dimension fingerprint in a database; step 2: before exposing a wafer, pre-selecting the tool and the mask to be used, selecting the corresponding critical dimension fingerprint from the database and combining the corresponding critical dimension fingerprint to form total critical dimension fingerprint; step 3: obtaining dose mapper data for exposure of the wafer according to the total critical dimension fingerprint; step 4: exposing the wafer, and correcting the exposure of the wafer according to the dose mapper data in an exposure process. The present application can quickly and easily generate a dose mapper data file, especially when there is a new tool or mask to be expanded, thus improving the efficiency of generating the dose mapper data file and improving the production capacity.

An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

A method for monitoring performance of a manufacturing process is described. The method includes receiving one or more input signals that convey information related to geometry of a substrate generated by the manufacturing process; and determining, with a prediction model, variation in the manufacturing process based on the one or more input signals. A method for predicting substrate geometry associated with a manufacturing process is also described. The method includes receiving input information including geometry information and manufacturing process information for a substrate; and predicting, using a machine learning prediction model, output substrate geometry based on the input information. The method may further include tuning the predicted output substrate geometry. The tuning includes comparing the output substrate geometry to corresponding physical substrate measurements and/or predictions from a different non-machine learning prediction model, generating a loss function based on the comparison, and optimizing the loss function.

A method for training a machine learning model to generate a predicted measured image, the method including obtaining (a) an input target image associated with a reference design pattern, and (b) a reference measured image associated with a specified design pattern printed on a substrate, wherein the input target image and the reference measured image are non-aligned images; and training, by a hardware computer system and using the input target image, the machine learning model to generate a predicted measured image.

A method of making a mask includes computing a mask volume correction matrix for a given mask layout to be used to perform a lithography process. The mask volume correction matrix represents a diffraction field for a predetermined thickness of a material of the mask. A simulated mask pattern is computed by applying the mask volume correction matrix to the given mask layout. The simulated mask pattern is provided to a mask making tool.

A method for monitoring a process variation index includes operations of: obtaining a target parameter to be monitored and a reference parameter used to increase goodness of fit among structural parameters predicted by measuring a structure in a specific location of a wafer; obtaining a reference parameter set in a reference model; and calculating a process variation index capable of confirming a structural change of the structure according to a change in process conditions using the structural parameter and the reference parameter.

According to one embodiment, a method for displaying an index value in generation of a mask pattern verification model includes: calculating a first index value using a plurality of images; estimating a model on the basis of the first index value and pattern information; calculating a second index value using the model; and displaying at least one of the first index value and the second index value.