Some devices, systems, and methods obtain a material map of a region; divide the region into a plurality of subregions; perform, for each of one or more subregions of the plurality of subregions, a first drop-pattern-generation process, wherein the first drop-pattern-generation process generates a respective initial drop pattern for the subregion based on the material map; and perform, for each of the one or more subregions of the plurality of subregions, a second drop-pattern-generation process, wherein the second drop-pattern-generation process generates a respective revised drop pattern for the subregion based on the material map and on the respective initial drop pattern for the subregion.

An exposure system according to an aspect of the present disclosure includes a laser apparatus that outputs pulsed laser light, an illuminating optical system that guides the pulsed laser light to a reticle, a reticle stage, and a processor that controls the output of the pulsed laser light from the laser apparatus and the movement of the reticle performed by the reticle stage. The reticle has a first region where a first pattern is disposed and a second region where a second pattern is disposed, and the first and second regions are each a region continuous in a scan width direction perpendicular to a scan direction of the pulsed laser light, with the first and second regions arranged side by side in the scan direction. The processor controls the laser apparatus to output the pulsed laser light according to each of the first and second regions by changing the values of control parameters of the pulsed laser light in accordance with each of the first and second regions.

A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

A system includes a laser source configured to generate one or more bursts of laser pulses and a data collection and analysis system. The data collection and analysis system is configured to receive, from the laser source, data associated with the one or more bursts of laser pulses and determine, based on the received data, that the one or more bursts of laser pulses are for external use. The data collection and analysis system is further configured to determine, based on the received data, whether the one or more bursts of laser pulses are for an on-wafer operation or are for a calibration operation.

A verification device for verifying a design file for digital lithography comprises a memory and a controller. The memory comprises the design file. The controller is configured to access the design file and apply one or more compliance rules to the design file to determine compliance of the design file. The compliance rules comprises at least one of detecting non-orthogonal edges within the design file, detecting non-compliant overlapping structures within the design file, and detecting a non-compliant interaction between a reference layer of the design file and a target layer of the design file. The controller is further configured to verify the design file in response to a comparison of a number of non-orthogonal edges, non-compliant overlapping structures and non-compliant interactions to a threshold.

A method for determining a best focus and a best dose in the disclosure includes selecting a selection pattern from first and second shot regions of a wafer for split, measuring a critical dimension (CD) value of the selection pattern, thereby deriving a measurement CD value, calculating an effective CD value of the selection pattern for each of the first and second shot regions using the measurement CD value, calculating an upper-limit CD value and a lower-limit CD value of the selection pattern using the effective CD value of the selection pattern, calculating a process window area for the first shot region and a process window area for the second shot region using the upper-limit CD value and the lower-limit CD value of the selection pattern, and comparing the process window area for the first shot region and the process window area for the second shot region with each other.

A film formation device for forming a film of a composition on the substrate by irradiating the composition on the substrate with light, includes an optical modulation unit for forming a distribution of an integrated light amount of the light on the substrate, and a control unit for controlling the optical modulation unit, in which the control unit controls the distribution of the integrated light amount of the optical modulation unit on the basis of residual film ratio characteristics of the composition and at least one of a curved shape of an imaging plane of an original template used in a subsequent process and a surface shape of a base film formed on the substrate.

Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

An image projection system is provided. The system can be used for performing lithography. The system includes a deuterium light source, a converging lens coupled to the deuterium light source. The system includes an aperture configured to provide image tiling disposed adjacent to the converging lens. The system includes a movable stage disposed adjacent to the aperture. A method of fabricating an optical device is provided. The method includes depositing a resist over a substrate and determining an exposure pattern for the optical device. The method includes exposing a portion of the resist with a light beam based on the determined exposure pattern. Exposing the portion of the resist includes directing the light beam from a deuterium light source to the substrate and developing the resist.

A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.