Embodiments of the present disclosure relate to a photomask. The photomask may include: a substrate; and one or more pixel units formed over the substrate. Each pixel unit may include: at least one polymer crystal element configured to interact with extreme ultraviolet (EUV) light based on an orientation of the polymer crystal element; and a plurality of electrodes configured to control the orientation of the polymer crystal element by applying voltage across the polymer crystal element. Each pixel unit is controlled by the respective plurality of electrodes independently, and the one or more pixel units generate a pattern for lithography upon exposure to the EUV light.

The present disclosure provides a control method and system for a critical dimension. The control method includes: establishing a first database of a correspondence between an exposure dose of photoresist and a variation value of a critical dimension; obtaining an actual variation value of the critical dimension, and obtaining a first correction amount of the exposure dose based on the actual variation value and the first database; establishing a second database of a correspondence between waiting time between baking and development of the photoresist and the variation value of the critical dimension; presetting standard lag time between the baking and the development, obtaining actual waiting time between the baking and the development of the photoresist, and determining a time difference between the actual waiting time and the standard lag time; obtaining a compensated variation value of the critical dimension based on the time difference and the second database.

Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Computer implemented methods and computer program products have instructions for generating transfer functions that relate segments on lithography photomasks to features produced by photolithography and etching using such segments. Such methods may be characterized by the following elements: (a) receiving after development inspection metrology results produced from one or more first test substrates on which resist was applied and patterned using a set of design layout segments; (b) receiving after etch inspection metrology results produced from one or more second test substrates which were etched after resist was applied and patterned using said set of design layout segments; and (c) generating the transfer function using the set of design layout segments together with corresponding after development inspection metrology results and corresponding after etch inspection metrology results.

Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to he added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

The present disclosure provides methods and systems for correcting the shooting of images from a spatial light modulator (SLM) to a substrate, when cross-scan vibrations, including sub-pixel cross-scan vibrations, are present. The methods and systems include shifting a mask pattern on an SLM rotated relative to the in-scan direction of travel on a substrate, shifting along an axis of the SLM to correct for cross-scan vibrations, and either delaying, or accelerating, the shooting of the mask pattern onto the substrate.

Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

Methods and systems for determining information for a specimen are provided. Certain embodiments relate to bump height 3D inspection and metrology using deep learning artificial intelligence. For example, one embodiment includes a deep learning (DL) model configured for predicting height of one or more 3D structures formed on a specimen based on one or more images of the specimen generated by an imaging subsystem. One or more computer systems are configured for determining information for the specimen based on the predicted height. Determining the information may include, for example, determining if any of the 3D structures are defective based on the predicted height. In another example, the information determined for the specimen may include an average height metric for the one or more 3D structures.

A system, methods, and a non-transitory computer-readable medium for digital lithography to reduce mura in substrate sections. The boundary lines of the digital lithography need to be invisible. In one example, a system includes a processing unit configured to print a virtual mask file provided by a controller. The controller is configured to receive data and convert the data into a virtual mask file having an exposure pattern for a lithographic process. The exposure pattern includes a plurality of first sections, and second sections. Each first section forms a boundary with each second section along a first column of image projection systems of the processing unit. The controller patterns the substrate. The exposure pattern includes a first section pattern of each first section that crosses the eye to eye boundary with the second section making the boundary invisible.

A method of tuning a prediction model relating to at least one particular configuration of a manufacturing device. The method includes obtaining a function including at least a first function of first prediction model parameters associated with the at least one particular configuration, and a second function of the first prediction model parameters and second prediction model parameters associated with configurations of the manufacturing device and/or related devices other than the at least one particular configuration. Values of the first prediction model parameters are obtained based on an optimization of the function, and a prediction model is tuned according to these values of the first prediction model parameters to obtain a tuned prediction mode.