The present disclosure relates to a wafer processing apparatus and a wafer transfer method. The wafer processing apparatus includes: a first machine; a second machine, including a manipulator, the manipulator transfers a wafer to the machine through a connection port; the connection port is provided between the first machine and the second machine; door panels, provided on the first machine and used to close the connection port; a detector, for detecting a current position of the door panel; a driver, connected to the door panel, for driving the door panel to move to open or close the connection port; and a controller, connected to the detector, the driver and the manipulator, for controlling the door panel to move according to the current position of the door panel to open or close the connection port, and control the manipulator to transfer the wafer.

The present application relates to a dispatch method for a production line in a semiconductor process, a storage medium and a semiconductor device. The dispatch method for a production line in a semiconductor process can acquire an overlay error reference curve of a product lot to be exposed in equipment and set an overlay error range according to the overlay error reference curve. At the end of exposure, an overlay error for the product lot to be exposed can be acquired, and it can be determined whether the overlay error falls into the overlay error range. If the overlay error for the product lot to be exposed does not fall into the overlay error range, the product lot to be exposed can be continuously machined by this equipment.

A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

In an example, a method of operating an ultraviolet (UV) light source includes providing a supply power to the UV light source, and activating, using the supply power, the UV light source to emit UV light during a series of activation cycles. The method also includes, during at least one activation cycle in the series, sensing the UV light emitted by the UV light source to measure an optical parameter of the UV light. The optical parameter is related to an antimicrobial efficacy of the UV light. The method further includes adjusting, based on the measured optical parameter, an electrical parameter of the supply power to maintain a target antimicrobial efficacy of the UV light over the series of activation cycles.

In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

A reticle thermal expansion calibration method includes exposing a group of wafers and generating a sub-recipe, performing data mining and data parsing to generate a plurality of overlay parameters, extracting a plurality of predetermined parameters from the plurality of overlay parameters, performing a linear regression on each of the predetermined parameters, and generating a coefficient of determination for each of the predetermined parameters.

A method for manufacturing a plurality of mechanical resonators (100) in a manufacturing wafer (10), the resonators being intended to be fitted to an adjusting member of a timepiece, the method comprising the following steps: (a) manufacturing a plurality of resonators in at least one reference wafer according to reference specifications, such manufacture comprising at least one lithography step to form patterns of the resonators on or above the reference wafer and a step of machining in the reference plate using the patterns; (b) for the at least one reference plate, establishing a map indicative of the dispersion of stiffnesses of the resonators relative to an average stiffness value; (c) dividing the map into fields and determining a correction to be made to the dimensions of the resonators for at least one of the fields in order to reduce the dispersion; (d) modifying the reference specifications for the lithography step so as to make the corrections to the dimensions for the at least one field in the lithography step; (e) manufacturing resonators in a manufacturing wafer using the modified specifications.

A system and method for shaping a film on a partial field including determining an initial contact point. Receiving information about: a partial field of a substrate; and an edge of a patternable area of the substrate. Determining a chord that connects intersection vertices of the partial field and the edge. Determining coordinates of a bisecting line, wherein the bisecting line bisects the chord, and the bisecting line is orthogonal to the chord. Determining an initial contact point range on the bisecting line in which a template and formable material on the substrate contact each other. Contacting the formable material in the partial field on the substrate with the template at an initial contact point within the initial contact point range.

A method of determining a contribution of a process feature to the performance of a process of patterning substrates. The method may include obtaining a first model trained on first process data and first performance data. One or more substrates may be identified based on a quality of prediction of the first model when applied to process data associated with the one or more substrates. A second model may be trained on second process data and second performance data associated with the identified one or more substrates. The second model may be used to determine the contribution of a process feature of the second process data to the second performance data associated with the one or more substrates.

Some implementations described herein provide an exposure tool and associated methods of operation in which a scanner control system generates a scanner route for an exposure recipe such that the distance traveled by a substrate stage of the exposure tool along the scanner route is reduced and/or optimized for non-exposure fields on a semiconductor substrate. In this way, the scanner control system increases the productivity of the exposure tool, reduces processing times of the exposure tool, and increases yield in a semiconductor fabrication facility in which the exposure tool is included.