Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

A system for a semiconductor fabrication facility includes a manufacturing tool including a load port, a maintenance tool including a first track and at least one maintenance crane on the first track, a rectangular zone overlapping with the load port, a plurality of first sensors on the first track and at corners of the rectangular zone configured to detect a location of the maintenance crane and generate a first location date, a transporting tool including a second track and a OHT vehicle on the second track, at least a second sensor on the OHT vehicle and configured to generate a second location data, at least a third sensor on the load port, and a control unit configured to receive the first location data and the second location data, and send signals to the second sensor and the third sensor or to cut off the signal to the second sensor.

A method for adjusting a lithography process, wherein processing parameters of the lithography process include a first group of processing parameters and a second group of processing parameters, the method including: obtaining a change of the second group of processing parameters; determining a change of a sub-process window (sub-PW) as a result of the change of the second group of processing parameters, wherein the sub-PW is spanned by only the first group of processing parameters; and adjusting the first group of processing parameters based on the change of the sub-PW.

A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.

A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.

Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

An optical processing apparatus includes: a housing; a stage; and a light irradiation unit configured to cause a light source unit to emit light so as to form a strip-like irradiation area extending over an area wider than a width of a substrate in a right and left direction. The stage and the light irradiation unit are moved by a moving mechanism relatively to each other in a back and forth direction. Light emitted from the light irradiation unit is deviated by a light-path changing unit from a relative movement area of a substrate. When a substrate is relatively moved below the light irradiation unit without the intension of being subjected to a light irradiation process, a control unit outputs a control signal such that an irradiation area is not formed on a surface of the substrate by the light-path changing unit, while the light source unit emitting light.

A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.