According to one embodiment, a first test process concerning a light-exposure process is performed by forming a first lower layer and a first upper layer on a first substrate. A second test process concerning a light-exposure process is performed by forming a second lower layer and a second upper layer on a second substrate. A correction model is created on a basis of results obtained in the first test process and the second test process. A manufacturing process is performed by forming a third lower layer and a third upper layer on a third substrate. In the manufacturing process, an overlay estimation correction value is calculated by using the correction model, based on a first pattern position deviation amount, a step processing history in the manufacturing process, a second pattern position deviation amount, and an overlay residual, and the overlay estimation correction value is used in a light-exposure process.

A lithography system is provided and includes a light source device configured to emit a processing light beam onto the semiconductor wafer, to generate a penetrating light beam and a reflected light beam. The lithography system further includes a detecting module having a first detector and a second detector. The first detector is configured to receive the penetrating light beam to generate first power data, and the second detector is configured to receive the reflected light beam to generate second power data. The lithography system also includes a monitoring device configured to calculate absorbed power data of the semiconductor wafer according to the first power data, the second power data and reference power data of a reference light beam and configured to compensate for a pattern formed on the semiconductor wafer resulting from the processing light beam according to the absorbed power data and reference information.

To provide a cleaning apparatus advantageous for cleaning, for example, an original plate used to transfer a pattern to a substrate.

Provided is a cleaning apparatus that cleans an original plate used when a pattern is transferred to a substrate, the cleaning apparatus including a region dividing unit which divides the original plate into a plurality of regions on the basis of information of the original plate, a conditions generator which generates cleaning conditions for each of the separate regions, and a cleaner which cleans the original plate on the basis of the cleaning conditions.

An information processing apparatus includes an acquisition unit configured to acquire a plurality of pieces of collected data collected in a state where lithographic processing is executed by a lithography apparatus for forming a pattern by applying a plurality of processing conditions, a classification unit configured to classify the acquired data based on the processing conditions, a judgement unit configured to judge that an abnormality has occurred in the acquired collected data by judging whether the collected data falls within an allowable range specified based on the processing conditions.

Extreme ultraviolet (EUV) lithographic patterning methods are provided which implement a surface-hardened EUV resist mask to pattern features in multiple layers. A layer of EUV resist material is formed on a substrate. An EUV resist mask is formed by exposing and developing the layer of EUV resist material. A surface-hardened EUV resist mask is formed by applying a surface treatment to an upper surface of the EUV resist mask to form an etch-resistant layer that is embedded in the upper surface of the EUV resist mask. At least one layer of the substrate is patterned using the surface-hardened EUV resist mask. The surface treatment can be implemented using a neutral atom beam (NAB) process which is configured to implant a chemical or metallic species into the upper surface of the EUV resist mask to form the etch-resistant layer.

An extreme ultraviolet light generation apparatus includes a target supply unit configured to output a droplet target into a chamber device, a prepulse laser light irradiation system configured to irradiate the droplet target with prepulse laser light having linear polarization to generate a diffusion target, and a main pulse laser light irradiation system configured to irradiate the diffusion target with main pulse laser light to generate extreme ultraviolet light. Here, a cross section perpendicular to an optical axis of the main pulse laser light when being radiated to the diffusion target having a shape longer in a polarization direction of the prepulse laser light when being radiated to the droplet target than in directions other than the polarization direction.

A system for deep ultraviolet (DUV) optical lithography includes an optical source apparatus including N optical oscillators, N being an integer number greater than or equal to two, and each of the N optical oscillators is configured to produce a pulse of light in response to an excitation signal; and a control system coupled to the optical source apparatus. The control system is configured to determine a corrected excitation signal for a first one of the N optical oscillators based on an input signal, the input signal including an energy property of a pulse of light produced by another one of the N optical oscillators.

An apparatus for a semiconductor fabrication facility (FAB) is provided. In one embodiment, the apparatus includes a maintenance tool and a transporting tool configured to transport at least one customized. The maintenance tool includes a first track at a first horizontal plane, at least one maintenance crane movably mounted on the first track, and a plurality of first sensors on the first track. The first sensors are configured to define at least a danger zone and to detect a location of the maintenance crane. The transporting tool includes a second track at a second horizontal plane, at least one overhead hoisting transporting (OHT) vehicle movably mounted on the second track, and at least one second sensor on the OHT vehicle. The second horizontal plane is different from the first horizontal planes. The first horizontal plane and the second horizontal plane at least partially overlap each other from a plane view.

A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.

An inspection device includes a first processor, a second processor, and a server. The first processor detects first coordinates of first feature points from first images in a first image set. The second processor detects second coordinates of second feature points from second images in a second image set. The server generates reference coordinates based on the first coordinates and the second coordinates. The reference coordinates are transmitted to the first processor and the second processor. The first and second image sets correspond to scanned swaths on a wafer.