One of gamma ray lithography systems includes a gamma ray generator and a wafer stage. The gamma ray generator is configured to generate a substantially uniform gamma ray. The gamma ray generator includes a plurality of gamma ray sources and a rotational carrier. The rotational carrier is configured to hold the gamma ray sources and rotate along a rotational axis. The wafer stage is disposed below the gamma ray generator and configured to secure a wafer.

Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Online calibration of laser performance as a function of the repetition rate at which the laser is operated is disclosed. The calibration can be periodic and carried out during a scheduled during a non-exposure period. Various criteria can be used to automatically select the repetition rates that result in reliable in-spec performance. The reliable values of repetition rates are then made available to the scanner as allowed values and the laser/scanner system is then permitted to use those allowed repetition rates.

According to one embodiment, there is provided a semiconductor device manufacturing system, including a storage unit, a specifying unit, a determination unit and an adjustment unit. The storage unit stores device information indicating a relationship between image formation performance of an exposure device used for manufacturing a semiconductor device and mechanical operation accuracy. The specifying unit specifies a constraint of the mechanical operation accuracy according to the device information and the required image formation performance. The determination unit determines whether or not a correction parameter of an exposure condition satisfies the constraint. The adjustment unit adjusts the correction parameter according to a determination result of the determination unit.

Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

A method includes illuminating a mirror array with light having light amplitudes forming a first greyscale pattern, the mirror array including a number of mirrors and at least two of the mirrors are illuminated with a same amplitude of the light. The method also includes imaging the light with the light amplitudes onto a substrate to create a second greyscale pattern, different than the first greyscale pattern, at the substrate.

A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

A method for determining a control parameter for an apparatus used in a semiconductor manufacturing process, the method including: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data including values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data Advantageously, the efficiency and/or accuracy of processes is improved by determining how to perform the processes in dependence on dies within specification.

A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

A shutter device includes a light blocking unit and a voice coil motor. The voice coil motor includes a permanent magnet module, a guide track assembly and a coil assembly. The coil assembly is arranged on the guide track assembly, and the permanent magnet module is adapted to produce a magnetic field in the guide track assembly. The light blocking unit includes two shutter blades both connecting to the coil assembly. When energized, the coil assembly will produce a magnetic field having a direction same as or opposite to the direction of the magnetic field in the guide track assembly so that the coil assembly moves forward or backward along the guide track assembly to drive the two shutter blades to open or close. A method controls the shutter device. An exposure dose control method is used with a photolithography machine including the shutter device.