A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.

According to one embodiment, a correction plot in which a slit width is set different depending on overlay deviation in a shot region is generated. Then, a light-exposure scanning speed defined by a relative speed between a photomask stage with a photomask mounted thereon and a stage with a processing object mounted thereon is set, to obtain a desired light-exposure amount at each coordinate position, in accordance with the slit width in the correction plot. Then, a light-exposure process is performed, while controlling the slit width of a light-exposure slit, the photomask stage, and the stage, in accordance with the correction plot and the light-exposure scanning speed.

Online calibration of laser performance as a function of the repetition rate at which the laser is operated is disclosed. The calibration can be periodic and carried out during a scheduled during a non-exposure period. Various criteria can be used to automatically select the repetition rates that result in reliable in-spec performance. The reliable values of repetition rates are then made available to the scanner as allowed values and the laser/scanner system is then permitted to use those allowed repetition rates.

A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.

The present invention provides a semiconductor evaluation device for fabricating a suitable reference pattern utilized in comparison tests. The semiconductor evaluation device and computer program extract a process window in a more accurate range based on a two-dimensional evaluation of the pattern. In order to achieve the above described objects, the present invention includes a semiconductor evaluation device that measures the dimensions of the pattern formed over the sample based on a signal obtained by way of a charged particle beam device, selects a pattern whose dimensional measurement results satisfy specified conditions or exposure conditions when the pattern is formed, and forms synthesized contour data, by synthesizing contour data obtained from images of an identically shaped pattern in design data, and also a pattern formed under the selected exposure conditions or a pattern having a positional relation that is already known relative to the selected pattern.

A Lithographic apparatus and method of controlling a lithographic process. A substrate is provided and a photosensitive layer is provided on a main surface of the substrate. The substrate includes a base section and a mesa section. In the base section the main surface is in a base plane. The mesa section protrudes from the base plane. A radiation beam scans the photosensitive layer. A local dose applied to a partial area of the photosensitive layer by the radiation beam includes a base dose component and a correction dose component. The correction dose component is a function of a distance between the partial area and a transition between the base section and the mesa section and at least partly compensates an effect of a defocus, which results from a height difference between the mesa section and the base section, on a critical dimension in the partial area.

An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.

An exposure apparatus that performs scanning exposure for a substrate is provided. The apparatus comprises a light source, a digital mirror device including a plurality of mirrors capable of controlling a direction of light emitted from the light source and configured to operate to adjust an integrated exposure amount on the substrate in accordance with scanning of the substrate, a projection optical system configured to guide light from the digital mirror device to the substrate and project a pattern onto the substrate, and a controller configured to control the plurality of mirrors in the digital mirror device based on the pattern to be projected onto the substrate, wherein the controller controls the plurality of mirrors such that an integrated exposure amount in an edge portion of the pattern becomes larger than an integrated exposure amount in a portion other than the edge portion.

Embodiments of the present disclosure generally relate to an image projection system. The image projection system includes an active matrix solid state emitter (SSE) device. The active matrix solid state emitter includes a substrate, a silicon layer, and a emitter substrate. The silicon layer is deposited over the substrate having a plurality of transistors formed therein. The emitter substrate is positioned between the silicon layer and the substrate. The emitter substrate comprises a plurality of emitter arrays. Each emitter array defines a pixel, wherein one pixel comprises one or more transistors from the plurality of transistors. Each transistor is configured to receive a variable amount of current.

A lithography apparatus includes an extreme ultraviolet (EUV) scanner, an EUV source coupled to the EUV scanner, a quartz crystal microbalance and a feedback controller. The quartz crystal microbalance is disposed on an internal surface of at least one of the EUV source and the EUV scanner. The feedback controller is coupled to the quartz crystal microbalance and one or more of a radiation source, a droplet generator, and optical guide elements controlling the trajectory of the radiation source associated with the EUV source.