A method comprises receiving an integrated circuit (IC) chip design, and generating, by one or more processors and based on the IC chip design, dose information, a wafer image, and a wafer target. Further, the method comprises modifying, by the one or more processors, the dose information based on a comparison of the wafer image and the wafer target. Further, the method comprises outputting the modified dose information to a mask writing device.

A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

A method forms a pattern of metallic nanofeatures that generates by plasmonic resonance a desired image having a distribution of colors. The method includes providing a substrate having a layer of photosensitive material, exposing the layer to a high-resolution periodic pattern of dose distribution, and determining a low-resolution pattern of dose distribution such that the sum of the low-resolution pattern and the high-resolution periodic pattern of dose distribution is suitable for forming the pattern of metallic nanofeatures. The lateral dimensions of the metallic nano-features have a spatial variation across the pattern that corresponds to the distribution of colors in the desired image. The layer of photosensitive material is exposed to the low-resolution pattern of dose distribution. The layer of photosensitive material is developed to produce a pattern of nanostructures in the developed photosensitive material. The pattern of nanostructures is processed so that the pattern of metallic nanofeatures is formed.

A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

A target image-capture device may be configured to capture an image of a target that is made into plasma when irradiated with laser light and generates extreme-ultraviolet-light. The target image-capture device may include a droplet detector configured to detect passage of a droplet output as the target, and output a detection signal, an illumination light source, an image capturing element, a shutter device, and a controller configured to output, to the image capturing element, an exposure signal allowing the image capturing element to perform image capturing, and output, to the shutter device, a shutter open/close signal allowing a shutter to perform an open and close operation upon input of the detection signal. The controller may output the shutter open/close signal to the shutter device to make the shutter closed during when the droplet is irradiated with the laser light so that the plasma is generated.

System and method for generating a set of illumination patterns. Intensity distribution for each pixel in an array of pixels of actinic radiation at a plane of a shaping surface while it is in contact with formable material on a substrate is received. Predicted dosage pattern based on the intensity distribution for each pixel and a set of operational parameters is computed. Set of operational parameters may include sets of: modulation maps; positional shifts of an array of illuminators; duty cycles. Curing dose variation metric based on the predicted dosage pattern is determined. The curing dose variation metric is compared to a threshold. Different sets of operational parameters may be used to create an operational parameters superset. The curing set of operational parameters in the operational parameters superset is selected based on a comparison of the curing dose variation metric to a dose variation threshold.

A method for the exposure of image points of a photosensitive layer comprising a photosensitive material on a substrate by means of an optical system. The method including continuously moving the image points with respect to the optical system; and controlling a plurality of secondary beams by means of the optical system individually for individual exposures of each image point, whereby the secondary beams are put either into an ON state or into an OFF state, wherein a) secondary beams in the ON state produce an individual exposure of the image point assigned to the respective secondary beam and b) secondary beams in the OFF state do not produce any individual exposure of the image point assigned to the respective secondary beam; wherein, for the generation of image points with grey tones n>1, individual exposures are carried out by different secondary beams with individual doses D.

A method is provided that comprises printing FEM wafers having different predefined focus offsets and multiple corresponding sites, measuring signals from the sites, and quantifying a focus inaccuracy by comparing the measured signals from the corresponding sites across the wafers.

Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FEM wafer. In order to achieve the foregoing, the present invention proposes an exposure condition evaluation device which evaluates an exposure condition of a reduction projection exposure device, on the basis of the information of patterns exposed on a sample by the reduction projection exposure device, and which uses a second feature amount of a plurality of patterns formed by making exposure conditions uniform to correct a first feature amount of a plurality of patterns formed by a plurality of different exposure condition settings.