Techniques for lithography process delay characterization and effective dose compensation are provided. In one aspect, a method of analyzing a lithography process includes: applying a photoresist to a wafer; performing a post-apply bake of the photoresist; patterning the photoresist with sequences of open frame base line exposures performed at doses of from about 92% E0 to about 98% E0, and ranges therebetween, at multiple fields of the wafer separated by intervening programmed delay intervals, wherein E0 is the photoresist dose-to-clear; performing a post-exposure bake of the photoresist; developing the photoresist; performing a full wafer inspection to generate a grayscale map of the wafer; and analyzing the grayscale map to determine whether the intervening programmed delay intervals had an effect on the open frame base line exposures during the lithography process. Exposure dose compensation can then be applied to maintain a constant effective dose.

A laser chamber of an excimer laser apparatus includes a container including a first member and a second member and configured to accommodate a laser gas in the container and a seal member disposed between two seal surfaces facing each other, a seal surface of the first member and a seal surface of the second member. A laser-gas-side surface of the seal member is made of fluorine-based rubber, and an atmosphere-side surface of the seal member is formed of a film configured to suppress atmosphere transmission.

A lithographic system comprises a radiation source and a lithographic apparatus. The radiation source provides radiation to the lithographic apparatus. The lithographic apparatus uses the radiation for imaging a pattern onto multiple target areas on a layer of photo-resist on a semiconductor substrate. The imaging requires a pre-determined dose of radiation. The system is controlled so as to set a level of a power of the radiation in dependence on a magnitude of the pre-determined dose.

An extreme ultraviolet light generation system includes: a chamber; a target generation unit; a laser system configured to output a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that fluence of the first pre-pulse laser beam is 1.5 J/cm.sup.2 to 16 J/cm.sup.2 inclusive at a position where a target is irradiated with the first pre-pulse laser beam; and a control unit configured to control the laser system so that a first delay time from a timing of irradiation of the target with the first pre-pulse laser beam to a timing of irradiation with the second pre-pulse laser beam and a second delay time from the timing of irradiation of the target with the second pre-pulse laser beam to a timing of irradiation with the main pulse laser beam have a following relation:
the first delay time<the second delay time.

A radiation measurement system (200) comprising an optical apparatus (205) configured to receive a radiation beam (210) and change an intensity distribution of the radiation beam to output a conditioned radiation beam (215), and a spectrometer (220) operable to receive the conditioned radiation beam and determine spectral content of the conditioned radiation beam. The radiation measurement system may form part of a lithographic apparatus.

Methods and systems that include the generation of a map of modulation values for a spatial light modulator. In which a map representative of a desired curing region is received. Receiving, for each pixel of a spatial light modulator, spatial information representative of an intensity distribution of actinic radiation at a plane of formable material under a template that is guided from the spatial light modulator to the plane of the formable material for curing the formable material under the template. Receiving a dose threshold for the formable material. Generating a map of modulation values for each pixel in the spatial light modulator based on: the dose threshold; the spatial information for all of the pixels; and the map representative of the desired curing region.

The present invention relates to a stage system (130), which comprises a pre-exposure element (134), and to a method employing the pre-exposure element for conditioning an optical system (100). The pre-exposure element comprises a radiation receiving area at a surface of the stage system, wherein the radiation receiving area comprises at least one pre-exposure plate configured to receive radiation. The stage system comprises further a controller (140), wherein the controller is capable to control an optical parameter of the pre-exposure element, herewith controlling a portion of received radiation reflected by the pre-exposure element.

Photolithography apparatus includes a radiation source, a mask to modify radiation from the radiation source so the radiation exposes photoresist layer disposed on a semiconductor substrate in patternwise manner, a wafer stage, and a controller. The wafer stage supports the semiconductor substrate. The controller determines target total exposure dose for the photoresist layer and target focus position for the photoresist layer; and controls exposure of first portion of the photoresist layer to first exposure dose of radiation at first focus position using first portion of the mask, moving the semiconductor substrate relative to the mask; and exposure of the first portion of the photoresist layer to second exposure dose of radiation using second portion of the mask at second focus position, and exposure of second portion of the photoresist layer to the second exposure dose at the second focus position using the first portion of the mask.

In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

Certain aspects relate to a method for improving a lithography configuration. In the lithography configuration, a source illuminates a mask to expose resist on a wafer. A processor determines a defect-based focus exposure window (FEW). The defect-based FEW is an area of depth of focus and exposure latitude for the lithography configuration with an acceptable level of defects on the wafer. The defect-based FEW is determined based on a predicted probability distribution for occurrence of defects on the wafer. A processor also determines a critical dimension (CD)-based FEW. The CD-based FEW is an area of depth of focus and exposure latitude for the lithography configuration with an acceptable level of CD variation on the wafer. It is determined based on predicted CDs on the wafer. The lithography configuration is modified based on increasing an area of overlap between the defect-based FEW and the CD-based FEW.