Embodiments of the present disclosure relate to the field of semiconductors, and provide a process recipe, a method and a system for generating same, and a semiconductor manufacturing method. The method for generating a diffraction-based process recipe includes: providing a basic process recipe, the basic process recipe is used to form an initial alignment pattern; and performing a feedback correction step for at least one time to adjust the basic process recipe and obtain an actual process recipe, which each time includes: obtaining a first pattern and a second pattern based on the basic process recipe prior to a current feedback correction step, the first pattern is the initial alignment pattern that is developed, the second pattern is the initial alignment pattern that is etched; and adjusting the basic process recipe prior to the current feedback correction step based on a difference between the first pattern and the second pattern.

An exposure apparatus that exposes a substrate to light by using an original in which a pattern is formed includes an illumination optical system arranged to guide illumination light to the original, the illumination light including first illumination light with a first wavelength and second illumination light with a second wavelength different from the first wavelength, and a projection optical system arranged to form a pattern image of the original by using the illumination light at a plurality of positions in an optical axis direction. The illumination optical system is configured to adjust a position deviation in a direction perpendicular to the optical axis direction between a pattern image formed by the first illumination light and a pattern image formed by the second illumination light by changing an incident angle of the illumination light entering the original.

A set of the pulses of light in a light beam is passed through a mask toward a wafer during a single exposure pass; at least a first aerial image and a second aerial image on the wafer based on pulses of light in the set of pulses that pass through the mask is generated during a single exposure pass, the first aerial image is at a first plane on the wafer and the second aerial image is at a second plane on the wafer, the first plane and the second plane being spatially distinct from each other and separated from each other by a separation distance along the direction of propagation; and a three-dimensional semiconductor component is formed.

A method includes driving, while producing a burst of pulses at a pulse repetition rate, a spectral feature adjuster among a set of discrete states at a frequency correlated with the pulse repetition rate; and in between the production of the bursts of pulses (while no pulses are being produced), driving the spectral feature adjuster according to a driving signal defined by a set of parameters. Each discrete state corresponds to a discrete value of a spectral feature. The method includes ensuring that the spectral feature adjuster is in one of the discrete states that corresponds to a discrete value of the spectral feature of the amplified light beam when a pulse in the next burst is produced by adjusting one or more of: an instruction to the lithography exposure apparatus, the driving signal to the spectral feature adjuster, and/or the instruction to the optical source.

A radiation system for controlling bursts of pulses of radiation comprises: an optical element; a controller; an actuator; and a sensor. The optical element is configured to interact with the pulses of radiation to control a characteristic of the pulses of radiation, the characteristic of the pulses of radiation being dependent on a configuration of the optical element. The controller is operable to generate a control signal. The actuator is configured to receive the control signal from the controller and to control a configuration of the optical element in dependence on the control signal. The sensor is operable to determine the characteristic of pulses having interacted with the optical element. The control signal for a given pulse in a given burst is dependent on the determined characteristic of a corresponding pulse from a previous burst.

An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

A system includes: an optical source including a plurality of optical oscillators; a spectral analysis apparatus; and a controller. Each optical oscillator is configured to produce a light beam. The controller is configured to: determine, based on data from the spectral analysis apparatus, whether the spectral property of the light beam of one of the optical oscillators is different than the spectral property of the light beam of at least another of the plurality of optical oscillators. If the spectral property of the light beam of the first one of the optical oscillators is different than the spectral property of the light beam of another of the optical oscillators, the controller is configured to adjust the spectral property of the light beam of the first one of the optical oscillators or of the light beam of at least one other of the optical oscillators.

A line narrowing device includes first and second prisms disposed at positions different in a wavelength dispersion direction of any of the first and second prisms, a third prism disposed on the optical path of an optical beam and through which the beam width of the optical beam is enlarged and first and second parts of the optical beam are incident on the first and second prisms, respectively, a grating disposed across the optical path of the first part having passed through the first prism and the optical path of the second part having passed through the second prism, a first actuator configured to adjust the incident angle of the first part on the grating, a second actuator configured to adjust the incident angle of the second part on the grating, and a third actuator configured to adjust an energy ratio of the first and second parts.

A sensor degradation evaluation method according to an aspect of the present disclosure includes an evaluation step of evaluating degradation of at least one of a sensor for coarse measurement that receives interference fringes produced by a spectrometer for coarse measurement and a sensor for fine measurement that receives interference fringes produced by a spectrometer for fine measurement, and the evaluation step includes causing a plurality of kinds of laser light having wavelengths different from one another to be sequentially incident on the spectrometer for coarse measurement and the spectrometer for fine measurement and acquiring a coarse-measurement wavelength and a fine-measurement wavelength on a wavelength basis from a plurality of the received interference fringes, acquiring a degradation parameter on a wavelength basis from the coarse-measurement wavelength and the fine-measurement wavelength on a wavelength basis, and comparing the degradation parameter on a wavelength basis with a threshold.

A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.