An exposure apparatus includes a first temperature controller for controlling a temperature distribution on an optical element of a projection optical system, and a second temperature controller for controlling a temperature distribution on an optical element of the projection optical system, wherein in a first period in which the exposure operation is executed, at least one of the first temperature controller and the second temperature controller operates to reduce a change in an aberration of the projection optical system due to the exposure operation being executed, and in a second period which follows the first period and in which the exposure operation is not executed, at least one of the first temperature controller and the second temperature controller operates to reduce a change in an aberration due to the exposure operation not being executed.

A mirror structure includes an insulator layer and a first conductive layer disposed on the insulator layer. The first conductive layer includes a first non-conductive film disposed on the insulator layer. The first non-conductive film includes one or more first conductive segments. The mirror structure also includes a reflective layer disposed on the first conductive layer and an electro optical layer disposed on the reflective layer. The mirror structure further includes a second conductive layer disposed on the electro optical layer. The second conductive layer includes a second non-conductive film disposed on the electro optical layer. The second non-conductive film includes one or more second conductive segments.

A multi-channel device and method for measuring the distortion and magnification of objective lens. The multi-channel device for measuring the distortion and magnification of objective lens comprises an illumination system, a reticle stage, a test reticle, a projection objective lens, a wafer stage and a multi-channel image plane sensor, wherein the multi-channel image plane sensor simultaneously measures the image placement shifts between actual image points and nominal image points after a plurality of object plane test marks are imaged by the projection objective lens, and calculates the distortion and magnification errors of the objective lens by fitting, which shortens the measurement time, eliminates the influence of wafer stage errors on the measurement accuracy and improves the measurement accuracy.

A method of predicting deflection of a pellicle which will occur during movement of the pellicle in a lithographic apparatus, the method including receiving parameters regarding properties of the pellicle and receiving parameters regarding the expected movement of the pellicle. The parameters are applied to a model which predicts deflection of the pellicle as a function of those parameters. The model includes a plurality of sub-models which relate to different components of deflection of the pellicle. An output of the model may be used to predict.

Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

A projection system (PS1) for a lithographic apparatus comprises: an optical path (100); a plurality of sensors (S1-S4); one or more actuators (A1-A4); and a controller (CN). The optical path is operable to receive an input radiation beam (Bin) and to project an output radiation beam (Bout) onto a substrate to form an image. The optical path comprises: a plurality of optical elements (M1-M4), the plurality of optical elements comprising: a first set of at least two optical elements (M1, M4) and a second set of at least one optical element (M2, M3). Each sensor is associated with one of the plurality of optical elements and is operable to determine a position of that optical element. Each actuator is associated with one of the second set of optical elements and is operable to adjust that optical element. The controller is operable to use the one or more actuators to adjust the second set of optical elements in dependence on the determined position of the first set of optical elements so as to at least partially compensate for optical aberrations and/or line-of-sight errors caused by the positions of the first set of optical elements.

The invention provides a display device that allows formation of the boundary of exposure at an arbitrary position on its substrate. A display device includes: a display area; a terminal; and a wire formed between the display area and the terminal and connected to the terminal. The wire includes a first part, a second part, and a third part. The first part extends in a first direction. The second part and the third part extend in a direction different from the first direction. The first part is located between the second and third parts and includes a protruding portion protruding in a second direction perpendicular to the first direction.

A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

A method of reducing an aberration of a lithographic apparatus, the method including measuring the aberration, taking the measured aberration into account, estimating a state of the lithographic apparatus, calculating a correction using the estimated state, and applying the correction to the lithographic apparatus.

A test appliance and a method for testing a mirror, e.g., a mirror of a microlithographic projection exposure apparatus. The test appliance has a computer-generated hologram (CGH), and a test can be carried out on at least a portion of the mirror by way of an interferometric superposition of a test wave that is directed onto the mirror by this computer-generated hologram and a reference wave. Here, the computer-generated hologram (CGH) (120, 320) is designed in such a way that, during operation of the appliance, it provides a first test wave for testing a first portion of the mirror (101, 301) by interferometric superposition with a reference wave in a first position of the mirror (101, 301) and at least a second test wave for testing a second portion of the mirror (101, 301) by interferometric superposition with a reference wave in a second position of the mirror (101, 301).