Provided is an inspection method for simply measuring an ultra-small foreign substance in a composition selected from the group consisting of an actinic ray-sensitive or radiation-sensitive composition and a thermosetting composition. In addition, provided are a method for producing a composition and a method for verifying a composition, using the inspection method. The inspection method is an inspection method for a composition selected from the group consisting of an actinic ray-sensitive or radiation-sensitive composition and a thermosetting composition, the inspection method including a step X1 for applying the composition to a substrate X to form a coating film, a step X2 for removing the coating film from the substrate X using a removal solvent including an organic solvent, and a step X3 for measuring the number of defects on the substrate X after the removal of the coating film using a defect inspection device. In a case where the composition is the actinic ray-sensitive or radiation-sensitive composition, the step X2 is applied in a state where the coating film has not been subjected to an exposure treatment by irradiation with actinic rays or radiation, and in a case where the composition is the thermosetting composition, the step X2 is applied in a state where the coating film has not been subjected to a thermosetting treatment.

An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance L.sub.STOP [mm] calculated by the following equation.

L.sub.STOP=272.8.Math.E.sub.VG.sup.0.4522.Math.P.sup.−1

E.sub.AVG [eV] representing average kinetic energy of ions generated in the plasma generation region and P [Pa] representing a gas pressure inside the first partition wall

A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

A positioning method for particles on a reticle includes: data of positions passed by a target reticle within a preset period of time is determined according to path data of the target reticle that includes particle information of the target reticle at each scan moment; position information of the target reticle when particles are present on a surface of the target reticle is determined according to the data of positions, to obtain target position data of the target reticle; reticle position data of the target reticle within adjacent scan moments is determined according to the target position data, and a particle source position of the particles on the surface of the target reticle is determined from the reticle position data according to position priorities; and a particle position analysis report of the target reticle within the preset period of time is generated according to the particle source position.

In a method of inspecting an outer surface of a mask pod, a stream of air is directed at a first location of a plurality of locations on the outer surface. One or more particles are removed by the directed stream of air from the first location on the outer surface. Scattered air from the first location of the outer surface is extracted and a number of particles in the extracted scattered air is determined as a sampled number of particles at the first location. The mask pod is moved and the stream of air is directed at other locations of the plurality of locations to determine the sampled number of particles in extracted scattered air at the other locations. A map of the particles on the outer surface of the mask pod is generated based on the sampled number of particles at the plurality of locations.

A method for verifying semiconductor wafers includes receiving a semiconductor wafer including a plurality of layers. A first set of measurement data is obtained for at least one layer of the plurality of layers, where the first set of measurement data includes at least one previously recorded thickness measurement for one or more portions of the at least one layer. The first set of measurement data is compared to a second set of measurement data for the at least one layer. The second set of measurement data includes at least one new thickness measurement for the one or more portions of the at least one layer. The semiconductor wafer is determined to be an authentic wafer based on the second set of measurement data corresponding to the first set of measurement data, otherwise the semiconductor is determined to not be an authentic wafer.

A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.

A method for detecting a defect in a semiconductor fabrication process is disclosed. The method includes forming photoresist on a substrate; forming a fluorescent agent in the photoresist; and detecting the defect of the photoresist after being subjected to developing by utilizing the fluorescent agent.

The present disclosure is directed to a EUV mask measurement tool having a source assembly that generates a high power extreme ultraviolet (EUV) light beam, a detector assembly including a projection optics system and a CCD camera, a stage for supporting a patterned mask, the pattern mask including a plurality of predetermined test sites, a processor programmed to determine a site specific best focus plane for each of the plurality of predetermined test sites on the patterned mask, and a program module to generate instructions to move the stage to the best focus plane for each of the plurality of predetermined test sites on the patterned mask. In addition, a method for generating a site specific best focus plane for each of the plurality of predetermined test sites using a continuous scanning process that provides a continuous image output from the test site.