A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

A system for optical imaging of defects on unpatterned wafers that includes an illumination module, relay optics, a segmented polarizer, and a detector. The illumination module is configured to produce a polarized light beam incident on a selectable area of an unpatterned wafer. The relay optics is configured to collect and guide, radiation scattered off the area, onto the polarizer. The detector is configured to sense scattered radiation passed through the polarizer. The polarizer includes at least four polarizer segments, such that (i) boundary lines, separating the polarizer segments, are curved outwards relative to a plane, perpendicular to the segmented polarizer, unless the boundary line is on the perpendicular plane, and (ii) when the area comprises a typical defect, a signal-to-noise ratio of scattered radiation, passed through the polarizer segments, is increased as compared to when utilizing a linear polarizer.

A method for polishing a workpiece in the production of an optical element, in particular for microlithography, wherein a relative movement takes place between a polishing tool (300) and a workpiece surface (110, 120, 210) being machined. A polishing tool surface (215, 315) of the polishing tool (300) is formed by a viscoelastic polishing medium (303), wherein the polishing tool surface has an average diameter which is less than 50% of the average diameter of the workpiece surface being machined. The polishing tool surface during polishing is guided by an overrun distance beyond at least one edge (110a, 110b, 120a, 120b, 210a, 210b) delimiting the workpiece surface being machined, wherein the average diameter of the polishing tool surface is at least twice the overrun distance.

A comprehensive inspection device for an EUV exposure process includes: a light generation unit configured to generate EUV light; a splitter configured to split the EUV light into first EUV light and second EUV light; an optical characteristic evaluation unit configured to detect reflectance and transmittance of the pellicle and reflectance of the object by measuring an intensity of the first EUV light, which has been transmitted through the pellicle, reflected from an object, and re-transmitted through the pellicle, and an intensity of the first EUV light, which has been directly reflected from the object without the pellicle; and an imaging inspection unit configured to inspect imaging performance of a mask by focusing the second EUV light, which has been reflected and diffracted from the mask, through an objective lens, and then collecting the focused second EUV light to obtain an aerial region image.

Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.

A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

A method for determining deviations in a fabrication process, the method including: providing a sample with a layer having a periodic structure fabricated using the fabrication process and intended to cause a corresponding part of the layer to be fully reflective for light having a wavelength in a wavelength range and having an angle of incidence in an angle range; illuminating the sample with light having a wavelength in the wavelength range and an angle of incidence in the angle range; detecting light reflected and/or scattered from the layer of the sample; and determining deviations in the fabrication process from the detected light.