A beam metrology device for determining at least one characteristic of first radiation and/or at least one characteristic of second radiation, said second radiation being generated via a first nonlinear process upon receiving a first portion of the first radiation; the beam metrology device comprising: a metrology device nonlinear medium configured to receive a second portion of the first radiation and thereby to generate third radiation via a second nonlinear process; at least one detector configured to measure at least one characteristic of the third radiation; and a processing unit operable to determine the at least one characteristic of the first radiation and/or the at least one characteristic of the second radiation based on said at least one characteristic of the third radiation.

A method for manufacturing a batch of silicon balance springs from SOI (Silicon On Insulator) plates, designed to keep the value of the resilient torque of the balance springs within a given range. This method includes, in order, the following steps: aPhotolithography and deep reactive ion etching (DRIE) of at least one SOI plate, on which there is at least one balance spring structure and a measurement structure, bMeasuring a parameter of the measurement structure, the value of the measurement parameter being correlated to the value of the resilient torque of the balance spring in a manner known per se, cPrecision adjusting the photolithography and DRIE parameters based on the value of said measurement parameter dIterating steps a, b and c so as to continuously control the dissipation of the resilient torque of the balance springs.

Embodiments of the present disclosure relate to a method of digital lithography for semiconductor packaging and a software application. The method includes receiving metrology data to a digital lithography system, the metrology data corresponding to the pillar heights and pillar critical dimensions of a plurality of non-uniform pillars disposed over the die, wherein at least two pillars have different pillar heights and different pillar critical dimensions, the digital lithography system is operable to update a mask pattern, the mask pattern corresponding to a pattern of uniform pillars, updating the mask pattern according to the metrology data to generate a compensated mask pattern, and conducting a digital lithography process to pattern on a resist to form a plurality of vias, the vias are formed over each non-uniform pillar of the plurality of non-uniform pillars and include a via depth and a via critical dimension after the resist is developed.