An electrostatic substrate holder for use in an extreme ultraviolet radiation lithography system includes a substrate receiving surface having a plurality of gas passages in fluid communication with a variable gas pressure pump. Varying the pressure in a void space between the backside of the substrate and the substrate receiving surface of the substrate holder promotes removal of non-gaseous materials within the void space between the backside of the substrate and the substrate receiving surface of the substrate holder.

An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.

A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

A reticle holding tool is provided. The reticle holding tool includes a housing including a top housing member and a lateral housing member. The lateral housing member extends from the top housing member and terminates at a lower edge. The reticle holding tool further includes a reticle chuck. The reticle chuck is positioned in the housing and configured to secure a reticle. The reticle holding tool also includes a gas delivery assembly. The gas delivery assembly is positioned within the housing and configured to supply gas into the housing.

A lithography apparatus is provided. The lithography apparatus includes a reticle stage. The reticle stage includes a main base, an electrostatic chuck and a safety protecting device. The electrostatic chuck is disposed on the main base and configured to generate an electrostatic force for holding a reticle. The safety protecting device is connected to the main base and is configured to generate a pushing force toward the reticle when the electrostatic force generated by the electrostatic chuck is interrupted.

A substrate support for supporting a substrate. The substrate support comprises a main body, a clamping device and a dither device. The main body comprises a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate W is being loaded onto the support surface.

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

A process for manufacturing a flat, polymer-coated electrostatic chuck platen involves imposing forces on the chuck to compensate for platen warpage induced during shrinkage of the polymer coating as it is cured.

A lithographic apparatus substrate table comprises a plurality of first projections, whereby the first projections define a first substrate supporting plane and a plurality of second projections, whereby the second projections define a second substrate supporting plane. The substrate table further comprises a clamping device configured to exert a clamping force onto the substrate. The second substrate supporting plane is parallel to the first substrate supporting plane. The second substrate supporting plane is offset in respect of the first substrate supporting plane in a direction perpendicular to the first and second substrate supporting planes. The lithographic apparatus substrate table is configured to support the substrate on the second projections at the second substrate supporting plane before application of the clamping force by the clamping device. The second projections are configured to deform upon application by the clamping device of the clamping force onto the substrate, thereby providing the substrate to move from the second substrate supporting plane to the first substrate supporting plane when clamped by the clamping device.

A substrate restraining system comprising: a substrate table and a plurality of circumferentially arranged restrainers each comprising a spring, wherein the spring has a proximal end and a distal end, wherein the distal end of the spring is radially displacable, and wherein a base of the proximal end of the spring is fixed to the substrate table at a fixing location.