A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

A reticle carrier described herein is configured to quickly discharge the residual charge on a reticle so as to reduce, minimize, and/or prevent particles in the reticle carrier from being attracted to and/or transferred to the reticle. In particular, the reticle carrier may be configured to provide reduced capacitance between an inner baseplate of the reticle carrier and the reticle. The reduction in capacitance may reduce the resistance-capacitance (RC) time constant for discharging the residual charge on the reticle, which may increase the discharge speed for discharging the residual charge through support pins of the reticle carrier. The increase in discharge speed may reduce the likelihood that an electrostatic force in the reticle carrier may attract particles in the reticle carrier to the reticle. This may reduce pattern defects transferred to substrates that are patterned using the reticle, may increase semiconductor device manufacturing quality and yield, and may reduce scrap and rework of semiconductor devices and/or wafers.

A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween that includes a reticle, and a layer of electrostatic discharge material disposed on the first surface, wherein the electrostatic discharge material reduces electrostatic charges on the reticle.

A method for preventing photomask contamination includes securing a photomask on a bottom surface of an electrostatic chuck; generating a first voltage at a peripheral area of the bottom surface of the electrostatic chuck to attract a particle onto the peripheral area of the bottom surface of the electrostatic chuck, wherein the peripheral area of the bottom surface of the electrostatic chuck is not directly above the photomask; after generating the first voltage, generating a second voltage at the peripheral area of the bottom surface of the electrostatic chuck to repulse the particle, wherein the first voltage and the second voltage have opposite electrical properties; and generating a third voltage, by using a collecting plate, near a sidewall of the photomask to attract the repulsed particle.

An object holder configured to support an object, the object holder including: a core body comprising a plurality of burls having distal ends in a support plane for supporting the object; and an electrostatic sheet between the burls, the electrostatic sheet comprising an electrode sandwiched between dielectric layers, wherein the electrostatic sheet is bonded to the core body by a bonding material having a thickness of at least 100 nm.

A substrate support for supporting a substrate. The substrate support includes a main body, a clamping device and a dither device. The main body includes a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate is being loaded onto the support surface.

A reticle carrier described herein is configured to quickly discharge the residual charge on a reticle so as to reduce, minimize, and/or prevent particles in the reticle carrier from being attracted to and/or transferred to the reticle. In particular, the reticle carrier may be configured to provide reduced capacitance between an inner baseplate of the reticle carrier and the reticle. The reduction in capacitance may reduce the resistance-capacitance (RC) time constant for discharging the residual charge on the reticle, which may increase the discharge speed for discharging the residual charge through support pins of the reticle carrier. The increase in discharge speed may reduce the likelihood that an electrostatic force in the reticle carrier may attract particles in the reticle carrier to the reticle. This may reduce pattern defects transferred to substrates that are patterned using the reticle, may increase semiconductor device manufacturing quality and yield, and may reduce scrap and rework of semiconductor devices and/or wafers.

A method of manufacturing an object holder for use in a lithographic apparatus, the object holder including one or more electrically functional components, the method including: using a composite structure including a carrier sheet different from a main body of the object holder and a layered structure including one or a plurality of layers and formed on the carrier sheet; connecting the composite structure to a surface of the main body such that the layered structure is between the carrier sheet and the surface of the main body; and removing the carrier sheet from the composite structure, leaving the layered structure connected to the main body.

An object table has a lifting mechanism to displace an object from a support surface. The lifting mechanism includes one or more elongated rods extending in a direction substantially perpendicular to the support surface to support the object at a distance from the support surface, the one or more elongated rods being displaceable between positions below the support surface and protruding from the support surface. The mechanism further includes a locking mechanism configured to limit a rotation about a longitudinal axis of the one or more elongated rods. The locking mechanism includes an elastic element that is mechanically connected to both a housing of the lifting mechanism and the one or more elongated rods, the elastic element configured to have a comparatively low stiffness in the support direction and a comparatively high stiffness in a rotational direction about the longitudinal axis.

A method for removing particles from a semiconductor process chamber including at least the following steps is provided. Electrical charges having a first polarity are accumulated on a receiving surface of the substrate holder by applying a voltage to the substrate holder. The particles having a second polarity in the semiconductor process chamber are attracted to move toward the receiving surface of the substrate holder on which the electrical charges having the first polarity are accumulated, where the first polarity is opposite to the second polarity. The particles having the second polarity are removed from the semiconductor process chamber. Other methods for removing particles from a semiconductor process chamber are also provided.