A system for estimating front side overlay on a sample based on shape data is disclosed. The system includes a characterization sub-system and a controller. The controller includes one or more processors configured to: generate a vacuum hole map of a vacuum chuck; generate a vacuum force distribution across a sample based on the generated vacuum hole map of the vacuum chuck; determine shape data of the sample based on the vacuum force distribution and an identified relationship between backside surface roughness and vacuum force of the vacuum chuck; and convert the shape data of the sample to an overlay value of a frontside surface of the sample.

Methods and system are disclosed for multipolar electrostatic chucks (ESCs) that provide improved clamping of microelectronic workpieces within processing equipment. The disclosed multipolar ESCs effectively clamp microelectronic workpieces including those with significant bows. Multipolar ESC embodiments include a dielectric body and multiple sets of electrodes formed within the dielectric body. Further, multiple electric fields are generated between the multiple sets of electrodes to facilitate the processing of the microelectronic workpiece. For example, a voltage generator can be used to apply voltages to the multiple sets of electrodes to generate the multiple electric fields. These electric fields can migrate charge to edges of a microelectronic workpiece and can be used to facilitate clamping of the microelectronic workpiece and/or to reduce bow in a microelectronic workpiece. Sensors can also be used to help control and improve the operation of the multipolar ESCs.

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask. The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force. The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted. When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

An object holder for a lithographic apparatus has a main body having a surface. A plurality of burls to support an object is formed on the surface or in apertures of a thin-film stack. At least one of the burls is formed by laser-sintering. At least one of the burls formed by laser-sintering may be a repair of a damaged burl previously formed by laser-sintering or another method.

An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask.

The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force.

The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted.

When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

Methods and systems are described for reducing particles in the vicinity of an electrostatic chuck (300) in which a cleaning reticle or substrate (320) is secured to the chuck, the cleaning reticle or substrate having surfaces partially devoid of conductive material so that an electric field from the chuck can pass through to a volume adjacent the substrate to draw particles (360) in the volume to the surface of the substrate. Voltage supplied to the chuck may have an alternating polarity to enhance the attraction of particles to the surface.

A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

A method for removing particles from a semiconductor process chamber including at least the following steps is provided. Electrical charges having a first polarity are accumulated on a receiving surface of the substrate holder by applying a voltage to the substrate holder. The particles having a second polarity in the semiconductor process chamber are attracted to move toward the receiving surface of the substrate holder on which the electrical charges having the first polarity are accumulated, where the first polarity is opposite to the second polarity. The particles having the second polarity are removed from the semiconductor process chamber. Other methods for removing particles from a semiconductor process chamber are also provided.

A lithographic apparatus is provided. The lithographic apparatus includes a reticle and an electrostatic clamp configured to releasably hold the reticle. The electrostatic clamp includes a first substrate having opposing first and second surfaces, a plurality of burls located on the first surface and configured to contact the reticle, a second substrate having opposing first and second surfaces. The first surface of the second substrate is coupled to the second surface of the first substrate. A plurality of cooling elements are located between the first surface of the second substrate and the second surface of the first substrate. The cooling elements are configured to cause electrons to travel from the second surface of the first substrate to the first surface of the second substrate. Each cooling element is substantially aligned with a respective burl.