A mask chuck may include a base plate including a central region and an edge region surrounding the central region, a head part including a first surface connected to the edge region of the base plate and configured to move on the edge region to be close to the central region or away from the central region, and a pad part disposed on a second surface of the head part opposite to the first surface of the head part. The edge region may include a first edge region extending in a first direction, a second edge region extending in the first direction and spaced apart from the first edge region in a second direction crossing the first direction, a third edge region extending in the second direction, and a fourth edge region extending in the second direction and spaced apart from the third edge region in the first direction.

A reticle pod with antistatic capability includes a base and plural of support members. The base has a carrying surface having a recess formed thereon and defined by a bottom surface. The support members encircle the carrying surface of the base and are adapted to support a reticle. The recess is defined by a depth extending between the carrying surface and the bottom surface. The depth ranges from 300 μm to 3400 μm to thereby weaken the electrostatic force exerted upon particles on the carrying surface.

The invention discloses a reticle pod for receiving a reticle. The reticle pod includes a base and plural support device provided on the base for supporting the reticle. A first distance is defined between a peripheral area of a bottom surface of the reticle and an upward facing top surface of the base. A second distance is defined between a central area of the bottom surface of the base and the upward facing top surface of the base, wherein the central area is encircled by the peripheral area. The second distance is larger than the first distance.

The invention discloses a substrate storage apparatus having a detecting device detachably connecting to an outer pod. The detecting device includes a sensing member having a sensing terminal, a cavity and a sensor. The sensing terminal detachably connects to the outer pod such that the sensing terminal exposes in an accommodating space inside of the outer pod. The cavity receiving the sensor extends to an outside of the outer pod and the accommodating space. The cavity communicates with the accommodating space through the sensing terminal, allowing the sensor to read information regarding the accommodating space.

The present application relates to a carbon dioxide snow cleaning apparatus comprising: a carbon dioxide source; a carbon dioxide snow nozzle in fluid communication with the carbon dioxide source; a charging element; and a collection surface. Also described is a method of cleaning a surface, the method comprising the steps of: (i) passing a stream of carbon dioxide out of a carbon dioxide snow nozzle to form a carbon dioxide snow stream; (ii) charging the carbon dioxide snow stream; (iii) directing the charged carbon dioxide snow stream onto the surface to be cleaned; (iv) collecting particles removed by the charged carbon dioxide snow stream from the surface to be cleaned on a collection surface. Also described is the use of such apparatus in a lithographic apparatus and the use of such an apparatus or method.

The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.

An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.

A lithographic apparatus that includes an illumination system that conditions a radiation beam, a first stationary plate having a first surface, and a reticle stage defining, along with the first stationary plate, a first chamber. The reticle stage supports a reticle in the first chamber, and the reticle stage includes a first surface spaced apart from a second surface of the first stationary plate, thereby defining a first gap configured to suppress an amount of contamination passing from a second chamber to the first chamber. The first stationary plate is between the reticle stage and both the illumination system and a projection system configured to project a pattern imparted to the radiation beam by the patterning device onto a substrate.

A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.