A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.

In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO.sub.2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.

A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.

Particulate deposition rate on a photolithographic mask, particularly of tin (Sn) particles produced within an EUV light source, is reduced by producing turbulence within a radiation source chamber of the EUV light source. Turbulence can be produced by changing the temperature, pressure, and/or gas flow rate within the radiation source chamber. The turbulence reduces the number of particles exiting the EUV light source which could be deposited on the photomask.

A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.

The present application provides an exposure machine, relates to semiconductor integrated circuit manufacturing technologies. The exposure machine includes a machine platform, a shielding device, and a drive device; the machine platform is provided with a recess portion, the recess portion has a top opening, a base and a placement table are disposed in the recess portion, the placement table is configured to carry a mask carrier, and the mask carrier can be placed on the placement table through the top opening; and the machine platform is further provided with a drive device and a movable shielding device, when the shielding device is at an initial position, the shielding device covers the top opening, and when the mask carrier needs to be placed on the placement table through the top opening, the drive device opens the shielding device to expose the top opening.

A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

A method includes shooting a primary droplet and a satellite droplet from a droplet generator along a common initial direction; applying a force to the primary droplet and the satellite droplet, wherein after applying the force, the primary droplet has a first deflection toward a first direction different than the common initial direction, and the satellite droplet has a second deflection toward a second direction different than the common initial direction, wherein the second deflection of the satellite droplet is greater than the first deflection of the primary droplet; and generating an extreme ultraviolet (EUV) light using an excitation laser hitting the primary droplet with the first deflection.

An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.