A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

A system for mitigating damage to optical elements caused by vacuum ultraviolet (VUV) light exposure is disclosed. The system includes a light source configured to generate VUV and a chamber containing one or more gaseous fluorine-based compounds of a selected partial pressure. The system includes one or more optical elements. The one or more optical elements are located within the chamber and are exposed to the one or more gaseous fluorine-based compounds. The VUV light generated by the light source is of sufficient energy to dissociate the fluorine-based compound within the chamber into a primary product.

A flow through Micro-Electromechanical Systems (MEMS) package and methods of operating a MEMS packaged using the same are provided. Generally, the package includes a cavity in which the MEMS is enclosed, an inlet through which a fluid is introduced to the cavity during operation of the MEMS and an outlet through which the fluid is removed during operation of the MEMS, wherein the package includes features that promote laminar flow of the fluid across the MEMS. The package and method are particularly useful in packaging spatial light modulators including a reflective surface and adapted to reflect and modulate a light beam incident thereon. Other embodiments are also provided.

Proposed for cleaning optical elements for the ultraviolet wavelength range having at least one metal-containing layer on a surface is a process that includes: —supplying activated hydrogen to the surface having the metal-containing layer; subsequently supplying inert gas having an H2O volume fraction of below 5 ppm, preferably below 1 ppm, particularly preferably below 0.2 ppm. To this end, an optical system (1) includes a housing (122), a supply line (161) of activated hydrogen, a supply line (162) of inert gas having an H.sub.2O volume fraction of below 5 ppm and a discharge line (163) for pumping gas out of the housing.

A method for removing particles from a semiconductor process chamber including at least the following steps is provided. Electrical charges having a first polarity are accumulated on a receiving surface of the substrate holder by applying a voltage to the substrate holder. The particles having a second polarity in the semiconductor process chamber are attracted to move toward the receiving surface of the substrate holder on which the electrical charges having the first polarity are accumulated, where the first polarity is opposite to the second polarity. The particles having the second polarity are removed from the semiconductor process chamber. Other methods for removing particles from a semiconductor process chamber are also provided.

A stage system includes a movable stage, and an encoder for measuring a position of the stage, wherein the encoder includes an emitter for emitting an encoder beam, a grating for interacting with the encoder beam, and a detector for detecting the encoder beam having interacted with the grating, the encoder beam in use propagating along an optical path; a purging cap at least partly enclosing the optical path; and a purging medium supply device for supplying a purging medium into the purging cap.

An apparatus comprising at least one sealing aperture (40) comprising a hollow part (41), having an inner surface (42), extending at an interface between different zones (50;60) of the apparatus; and a member (43) positioned in the hollow part configured to substantially transmit EUV radiation and to substantially filter non-EUV radiation at the interface; wherein the inner surface of the hollow part has a surface treatment configured to increase absorption of the non-EUV radiation that is transferred by the member to the hollow part.

A system for cleaning or suppressing contamination or oxidation in a EUV optical setting includes an illumination source, a detector, a first set of optical elements to direct light from the illumination source to a specimen and a second set of optical elements to receive illumination from the specimen and direct the illumination to the detector. The system also includes one or more vacuum chambers for containing the first and second set of optical elements and containing a selected purge gas ionizable by the light emitted by the illumination source. The first or second set of optical elements includes an electrically biased optical element having at least one electrically biased surface. The electrically biased optical element has a bias configuration suitable to attract one or more ionic species of the selected purge gas to the electrically biased surface in order to clean contaminants from the electrically biased surface.

A lithographic apparatus including: a projection system to project radiation onto a substrate supported on a substrate stage, during an exposure phase; a sensing system to sense a property of the substrate on the stage during a sensing phase; and a positioning system to determine a position of the stage relative to a reference system via a radiation path between the stage and the reference system, wherein the apparatus is configured to control stage movement relative to the reference system in the sensing phase and to control other movement relative to the reference system during the exposure phase; the stage or reference system having an outlet to provide a gas curtain to reduce ingress of ambient gas into the path; and the apparatus is operative such that a characteristic of the gas curtain is different in at least part of the sensing phase compared to in the exposure phase.

A lithography system includes a radiation source and a photomask. The radiation source is configured to generate electromagnetic radiation traveling towards the photomask. The lithography system also includes an incident channel between the radiation source and the photomask for the electromagnetic radiation to travel through. There are a first injection nozzle configured to generate a first particle shield between the photomask and an exit port of the incident channel and a second injection nozzle configured to generate a second particle shield inside the incident channel.