A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

In situ dynamic protection of an optical element surface against degradation includes disposing the optical element in an interior of an optical assembly for the FUV/VUV wavelength range and supplying at least one volatile fluorine-containing compound (A, B) to the interior for dynamic deposition of a fluorine-containing protective layer on the surface. The protective layer (7) is deposited on the surface layer by layer via a molecular layer deposition process. The compound includes a fluorine-containing reactant (A) supplied to the interior in a pulsed manner. A further reactant (B) is supplied to the interior also in a pulsed manner. An associated optical assembly includes an interior in which a surface is disposed, and at least one metering apparatus (123) that supplies a reactant to the interior. The metering apparatus provides a pulsed supply of the compound as a reactant (A, B) for layer by layer molecular layer deposition.

A system for measuring a beam. The system includes a measurement device configured to measure the beam and determine a signal based on the measured beam, and a fluid supply device configured to provide fluid as a fluid stream to, or surrounding, the beam. The system is configured to calculate noise of the signal, and to adjust a parameter of the fluid of the fluid stream to reduce the calculated noise.

The present invention provides a fluid purging system (100) for an optical element (120), comprising a fluid guiding unit arranged to guide a fluid, provided by a fluid supply system, over at least a curved portion of an optical surface (122) of the optical element. The fluid guiding unit comprises a fluid inlet and a first nozzle unit (110) for providing a fluid to the optical surface. The fluid guiding unit being formed by at least a first wall portion (102) and at least a second wall portion (104), wherein the second wall portion being configured to face the optical surface and to follow a contour of the optical surface. The second wall portion comprises a second nozzle unit (112).

A gas purifying filter includes a first gas permeable body having a gas inlet surface; a first adsorption layer disposed on the first gas permeable body and including activated carbon on which a phosphoric acid-based compound satisfying the following Formula 1 is supported; a second adsorption layer disposed on the first adsorption layer and including a hydrophobic zeolite having a SiO.sub.2/Al.sub.2O.sub.3 value of about 50 or more; and a second gas permeable body disposed on the second adsorption layer and having a gas outlet surface,

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where n is an integer greater than or equal to 1.

A method for a lithography exposing process includes placing a reticle over a reticle stage, generating a light beam by irradiating a droplet by a laser, projecting a first portion of the light beam over a plurality of light permeable protrusions formed on a reflection layer and directing, by the protrusions and the reflection layer, the first portion of the light beam to the reticle.

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

A method for manufacturing a semiconductor device includes forming a photoresist layer that includes a photoresist composition over a wafer to produce a photoresist-coated wafer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern in the photoresist layer. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer under a first pressure gas flow setting in a development chamber. The photoresist layer is rinsed, under the first pressure gas flow setting, to form a patterned photoresist layer exposing a portion of the wafer in the development chamber. The patterned photoresist layer is spin dried under a second pressure gas flow setting. A pressure of the development chamber under the second pressure gas flow setting is greater than the pressure of the development chamber under the first pressure gas flow setting.

The inventive concept provides a bake unit. The bake unit comprising: a housing having an upper cover and a lower frame, the upper cover and the lower cover in combination providing a treatment space for heat treatment of a substrate; a heater provided in the treatment space for heating a substrate placed thereon; a heater cup configured to surround the heater; and a first purge gas supply unit for providing a first purge gas flow to block inflow of outer air through a gap between the lower frame and the heater cup.