G03F7/70933

EXTREME ULTRAVIOLET LIGHT SOURCE SYSTEMS
20220104336 · 2022-03-31 ·

Extreme ultraviolet light source systems may include a chamber including a condensing mirror and having an intermediate focus, by which extreme ultraviolet light reflected from the condensing mirror is emitted along a first optical path, a blocking plate that may be on the chamber so as to intersect the first optical path and may include an opening through which the extreme ultraviolet light is emitted, a transparent cover on the blocking plate so as to cover the opening, a nozzle that may be between the chamber and the blocking plate so that an end portion faces the intermediate focus and may spray a first gas in a direction intersecting the first optical path, and an exhaust pipe between the chamber and the blocking plate so as to face the end portion of the nozzle.

APPARATUS FOR GENERATING EXTREME ULTRAVIOLET LIGHT AND LITHOGRAPHY APPARATUS INCLUDING THE SAME

An extreme ultraviolet (EUV) light generating apparatus includes a vessel including a first end and a second end opposite to each other and providing an internal space extending from the first end to the second end, a concave mirror adjacent to the first end of the vessel, a droplet generator supplying a droplet to the internal space of the vessel, a laser light source irradiating a laser beam to cause the droplet to emit EUV light, and a gas jet receiving a flow control gas and spraying the received flow control gas into the internal space of the vessel. The gas jet includes a ring-shaped main body including nozzles spaced apart from one another in a circumferential direction. The nozzles spray the received flow control gas in a downward direction.

EXPOSING APPARATUS AND METHOD FOR MANUFACTURING ARTICLE
20220066324 · 2022-03-03 ·

An exposing apparatus for exposing a substrate to transfer a pattern formed on an original to the substrate by using exposure light from a light source includes a projecting optical system configured to guide the exposure light having passed through the original to the substrate, a measuring unit configured to measure a position of the substrate in a first direction perpendicular to a substrate surface of the substrate by making measurement light incident on the substrate surface and to receive the measurement light reflected by the substrate surface, and a traveling direction setting means configured to set a traveling direction of first gas so as to supply the first gas toward a first space between the projecting optical system and the substrate from a first gas supplying mechanism, in which the first space is different from a second space through which the measurement light passes.

BAKE UNIT AND APPARATUS FOR TREATING SUBSTRATE

The inventive concept provides a bake unit. The bake unit comprising: a housing having an upper cover and a lower frame, the upper cover and the lower cover in combination providing a treatment space for heat treatment of a substrate; a heater provided in the treatment space for heating a substrate placed thereon; a heater cup configured to surround the heater; and a first purge gas supply unit for providing a first purge gas flow to block inflow of outer air through a gap between the lower frame and the heater cup.

Apparatus And A Method Of Forming A Particle Shield
20220043362 · 2022-02-10 ·

An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow and is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.

Extreme ultraviolet chamber apparatus, extreme ultraviolet light generation system, and method for manufacturing electronic device
11145429 · 2021-10-12 · ·

An extreme ultraviolet chamber apparatus includes: a chamber; an EUV condensing mirror arranged in the chamber; a first nozzle arranged in an outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a first direction along a reflective surface of the EUV condensing mirror; a second nozzle arranged in the outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a second direction away from the EUV condensing mirror; and an exhaust port arranged in the chamber.

Particle suppression systems and methods

A lithographic apparatus that includes an illumination system that conditions a radiation beam, a first stationary plate having a first surface, and a reticle stage defining, along with the first stationary plate, a first chamber. The reticle stage supports a reticle in the first chamber, and the reticle stage includes a first surface spaced apart from a second surface of the first stationary plate, thereby defining a first gap configured to suppress an amount of contamination passing from a second chamber to the first chamber. The first stationary plate is between the reticle stage and both the illumination system and a projection system configured to project a pattern imparted to the radiation beam by the patterning device onto a substrate.

Mirror, in particular for a microlithographic projection exposure apparatus or an inspection system
11086055 · 2021-08-10 · ·

A mirror, in particular for a microlithographic projection exposure apparatus or an inspection system, having a mirror substrate (205), a reflection layer (220), which is configured to have a reflectivity of at least 50% for electromagnetic radiation of a predefined operating wavelength that is incident on the optically effective surface (200a) of the mirror at an angle of incidence of at least 65° relative to the respective surface normal, and a barrier layer system (210), which is arranged between the reflection layer and the mirror substrate and has a sequence of alternating layer plies composed of a first material and at least one second material. The barrier layer system reduces penetration of hydrogen atoms that would otherwise penetrate the mirror substrate by at least a factor of 10.

EUV LITHOGRAPHY SYSTEM AND METHOD FOR DECREASING DEBRIS IN EUV LITHOGRAPHY SYSTEM

Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.

Conveyance apparatus, conveyance method, lithography apparatus, lithography system, and article manufacturing method
11073769 · 2021-07-27 · ·

A conveyance apparatus that is advantageous in terms of productivity is provided. The conveyance apparatus includes a holding unit configured to hold and convey a substrate, and an outlet unit which is disposed in the holding unit and includes a first outlet port configured to blow a gas in a first direction, which is a direction oblique to a first surface of the substrate held by the holding unit, toward the first surface.