A vacuum pumping system which comprises a plurality of vacuum pumping arrangements for evacuating a flammable gas stream and exhausting the gas stream through an exhaust outlet. A housing houses the vacuum pumping arrangements and forms an air flow duct for an air flow for mixing with the exhaust gas stream output from the exhaust outlet in a mixing region in the housing. An airflow generator generates an air flow through the air flow duct to cause mixing of air with the flammable gas stream to a percentage of the flammable gas in the air flow lower than the lower flammability limit of the flammable gas. An airflow sensor senses the flow of air for determining if the air flow is sufficient to dilute the flammable gas to lower than said percentage.

The present invention provides an exposure apparatus that exposes a substrate, comprising: an optical system configured to emit, in a first direction, light for exposing the substrate; a first supplier configured to supply a gas into a chamber where the optical system is arranged; and a second supplier configured to supply a gas to an optical path space where the light from the optical system passes through, wherein the second supplier includes a gas blower including a blowing port from which a gas is blown out in a second direction, and the guide member configured to guide the gas blown out from the blowing port to the optical path space, and the guide member includes a plate member extended on a side of the first direction of the blowing port so as to be arranged along the second direction.

A lithographic apparatus that includes an illumination system that conditions a radiation beam, a first stationary plate having a first surface, and a reticle stage defining, along with the first stationary plate, a first chamber. The reticle stage supports a reticle in the first chamber, and the reticle stage includes a first surface spaced apart from a second surface of the first stationary plate, thereby defining a first gap configured to suppress an amount of contamination passing from a second chamber to the first chamber. The first stationary plate is between the reticle stage and both the illumination system and a projection system configured to project a pattern imparted to the radiation beam by the patterning device onto a substrate.

A plate to be positioned between a movable stage and a projection system of a lithographic apparatus, the plate having a surface to face the movable stage; an opening through the plate for passage of patterned radiation beam; one or more gas outlets in a side of the opening and in the surface of the plate, wherein the one or more gas outlets are configured to supply gas to a region between the movable stage and the projection system, wherein all of the one or more gas outlets in the surface of the plate are positioned such that, for each of such one or more gas outlets, a line that is both orthogonal to the surface and intersects the gas outlet does not intersect the patterning device at any point during the entire range of movement of the patterning device.

A reticle holding tool is provided. The reticle holding tool includes a housing, a reticle chuck, and a gas delivery assembly. The housing includes an opening, a top housing member, and a lateral housing member extending from the top housing member and terminating at a lower edge which is located on a predetermined plane. The reticle chuck is positioned in the housing and has an effective surface configured to secure a reticle. The effective surface is located between the predetermined plane and the top housing member. The reticle chuck is movable between two boundary lines that are perpendicular to the effective surface. A width of the opening is greater than a distance between the two boundary lines. The gas delivery assembly is positioned within the housing and configured to supply gas into the housing.

A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.

The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and component.

A system for mitigating damage to optical elements caused by vacuum ultraviolet (VUV) light exposure is disclosed. The system includes a light source configured to generate VUV and a chamber containing one or more gaseous fluorine-based compounds of a selected partial pressure. The system includes one or more optical elements. The one or more optical elements are located within the chamber and are exposed to the one or more gaseous fluorine-based compounds. The VUV light generated by the light source is of sufficient energy to dissociate the fluorine-based compound within the chamber into a primary product.

An apparatus and method for controlling temperature of a patterning device in a lithographic apparatus, by flowing gas across the patterning device. A patterning apparatus includes: a patterning device support structure configured to support a patterning device; a patterning device conditioning system including a first gas outlet configured to provide a gas flow over a surface of the patterning device and a second gas outlet configured to provide a gas flow over a part of a surface of the patterning device support structure not supporting the patterning device; and a control system configured to separately control the temperature of the gas exiting the first and second gas outlets such that the gas exiting the second gas outlet is at a higher temperature than the gas exiting the first gas outlet and/or to separately control the temperature and gas flow rate of the gas exiting the first and second gas outlets.

A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.