An optical illumination system guides EUV radiation between a source region of an EUV light source and an object field, in which an object to be imaged is arrangeable. The illumination system has at least two EUV mirror components which reflect the EUV radiation and sequentially guide the EUV radiation between the source region and the object field. An optical diffraction component for suppressing extraneous light radiation is arranged on each of the two EUV mirror components. The two optical diffraction components are designed to suppress different extraneous light wavelengths. A first of the two optical diffraction components, which is arranged on a first of the EUV mirror components, is a grating with at least one first structure depth. A second of the two optical diffraction components, which is arranged on a second of the EUV mirror components, is a grating with at least one second different structure depth. The result can be improved suppression of extraneous light.

Provided in the disclosure is a photomask for detecting flare degree of lens of exposure machine table. The photomask includes a central exposure area and a peripheral area, exposure light of the exposure machine table passing through the lens and then penetrating the central exposure area to expose photoresist on a wafer, wherein the entire central exposure area is provided with a shading layer to prevent the exposure light from penetrating; and the peripheral area is provided with a plurality of light-transmitting stripes, and stray light formed after the exposure light passes through the lens penetrates the plurality of light-transmitting stripes to expose the photoresist. Further provided in the disclosure is a method for detecting flare degree of lens of exposure machine table by using the photomask. According to the disclosure, a lens flare problem of an exposure machine table can be found and solved in time.

The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.

Methods and apparatus are disclosed for determining a characteristic of a structure. In one arrangement, the structure is illuminated with first illumination radiation to generate first scattered radiation. A first interference pattern is formed by interference between a portion of the first scattered radiation reaching a sensor and first reference radiation. The structure is also illuminated with second illumination radiation from a different direction. A second interference pattern is formed using second reference radiation. The first and second interference patterns are used to determine the characteristic of the structure. Azimuthal angles of the first and second reference radiations onto the sensor are different.

For the purposes of positioning a component part, provision is made in an optical system for a stray magnetic field to be detected via a sensor device and for a correction signal for compensating the effect of the stray magnetic field on the positioning of the component part to be ascertained.

An illumination optical system of the present invention includes a first lens array FE including a plurality of lens cells dividing a light flux emitted from a light source into a plurality of light fluxes, a second lens array MLAi including lens cells on which spot lights exiting from the lens cells included in the first lens array FE are condensed, and a first optical member IL3 imaging the spot light, which has been condensed on the lens cell included in the second lens array MLAi, on one of optical modulation elements constituting an optical modulation unit.

A component with a reflective substrate, a photoresist layer disposed on the reflective substrate, and a light diffusing layer sandwiched between the reflective substrate and the photoresist layer is provided. The light diffusing layer includes an outer metal oxide layer with an outer rough surface configured to diffuse laser light during laser interference lithography of the photoresist layer. The outer metal oxide is also configured to be reduced to a conductive metallic layer during electroplating of the substrate. The outer metal oxide layer includes a plurality of elongated light diffusing elements extending in an outward direction from the substrate such that the outer rough surface diffuses at least 90% of laser light during the laser interference lithography of the photoresist layer.

A method of forming an anti-reflection layer, the method including applying a first mixture to an object, the first mixture made from a combination of aluminum tri-sec-butoxide (ATSB), a first chelating agent, water and an alcohol; removing a majority of the alcohol from the applied first mixture; after the removing, applying a second mixture to the object, the second mixture made from a combination of aluminum tri-sec-butoxide, a second chelating agent different than the first chelating agent, water and an alcohol; and removing a majority of the alcohol from the applied second mixture, wherein the applied first and second mixtures are used to form the anti-reflection layer.

An illumination optical system of the present invention includes a first lens array FE including a plurality of lens cells dividing a light flux emitted from a light source into a plurality of light fluxes, a second lens array MLAi including lens cells on which spot lights exiting from the lens cells included in the first lens array FE are condensed, and a first optical member IL3 imaging the spot light, which has been condensed on the lens cell included in the second lens array MLAi, on one of optical modulation elements constituting an optical modulation unit.

A stop, such as a numerical aperture stop, obscuration stop or false-light stop, for a lithography apparatus, includes a light-transmissive aperture and a stop element, in which or at which the aperture is provided. The stop element is opaque and fluid-permeable outside the aperture.