A component with a reflective substrate, a photoresist layer disposed on the reflective substrate, and a light diffusing layer sandwiched between the reflective substrate and the photoresist layer is provided. The light diffusing layer includes an outer metal oxide layer with an outer rough surface configured to diffuse laser light during laser interference lithography of the photoresist layer. The outer metal oxide is also configured to be reduced to a conductive metallic layer during electroplating of the substrate. The outer metal oxide layer includes a plurality of elongated light diffusing elements extending in an outward direction from the substrate such that the outer rough surface diffuses at least 90% of laser light during the laser interference lithography of the photoresist layer.

A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

A microlithographic projection exposure mirror has a mirror substrate (12, 32), a reflection layer system (21, 41) for reflecting electromagnetic radiation that is incident on the mirror's optical effective surface, and at least one piezoelectric layer (16, 36), which is arranged between the mirror substrate and the reflection layer system and to which an electric field for producing a locally variable deformation is applied by a first electrode arrangement situated on the side of the piezoelectric layer facing the reflection layer system, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. One of the electrode arrangements is assigned a mediator layer (17, 37, 51, 52, 53, 71) for setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement. The mediator layer has at least two mutually electrically insulated regions (17a, 17b, 17c, . . . ; 37a, 37b, 37c, . . . ).

A component with a reflective substrate, a photoresist layer disposed on the reflective substrate, and a light diffusing layer sandwiched between the reflective substrate and the photoresist layer is provided. The light diffusing layer includes an outer metal oxide layer with an outer rough surface configured to diffuse laser light during laser interference lithography of the photoresist layer. The outer metal oxide is also configured to be reduced to a conductive metallic layer during electroplating of the substrate. The outer metal oxide layer includes a plurality of elongated light diffusing elements extending in an outward direction from the substrate such that the outer rough surface diffuses at least 90% of laser light during the laser interference lithography of the photoresist layer.

A method of forming an anti-reflection layer, the method including applying a first mixture to an object, the first mixture made from a combination of aluminum tri-sec-butoxide (ATSB), a first chelating agent, water and an alcohol; removing a majority of the alcohol from the applied first mixture; after the removing, applying a second mixture to the object, the second mixture made from a combination of aluminum tri-sec-butoxide, a second chelating agent different than the first chelating agent, water and an alcohol; and removing a majority of the alcohol from the applied second mixture, wherein the applied first and second mixtures are used to form the anti-reflection layer.

An optical element reflects radiation, such as EUV radiation. The optical element includes a substrate with a surface to which a reflective coating is applied. The substrate has at least one channel through which a coolant can flow. The substrate is formed from fused silica, such as titanium-doped fused silica, or a glass ceramic. The channel has a length of at least 10 cm below the surface to which the reflective coating is applied. The cross-sectional area of the channel varies by no more than +/−20% over the length of the channel.

Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

Disclosed herein are methods of using a fluoro oil mask to prepare a beam pen lithography pen array.

A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

A method for producing a reflecting optical element for a projection exposure apparatus (1). The element has a substrate (30) with a substrate surface (31), a protection layer (38) and a layer partial system (39) suitable for the EUV wavelength range. The method includes: (a) measuring the substrate surface (31), (b) irradiating the substrate (30) with electrons (36), and (c) tempering the substrate (30). Furthermore, an associated reflective optical element for the EUV wavelength range, a projection lens with a mirror (18, 19, 20) as reflective optical element, and a projection exposure apparatus (1) including such a projection lens.