A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.

A structure in semiconductor fabrication includes at least a first periodic asymmetric feature and a periodic asymmetric second feature. The first feature contains a plurality of periodically distributed first elements. The first feature has a first asymmetric profile such that the first feature no longer has the same first asymmetric profile when it is rotated by 180 degrees. The second feature contains a plurality of periodically distributed second elements. The second feature has a second asymmetric profile such that the second feature no longer has the same second asymmetric profile when it is rotated by 180 degrees. The second asymmetric profile is different from the first asymmetric profile.

According to one embodiment, wafer lithography equipment includes an exposure unit transferring a circuit pattern onto a wafer, a measurement unit measuring a dimension of the circuit pattern and a calculator. The calculator includes calculating a first difference. The first difference is the difference between a first dimension and a second dimension. The first dimension is obtained by substituting a first exposure amount and a first focus distance into an approximate response surface function. The second dimension is measured by the measurement unit. The calculator also includes calculating a second difference. The second difference is the sum total of the first difference for all of the circuit patterns. The calculator also includes calculating a second exposure amount and a second focus distance causing the difference between the approximate response surface function and the second difference to be a minimum. The calculator also includes calculating a correction exposure amount.

Embodiments of the present disclosure are related to systems and methods for autofocusing an imaging apparatus in real-time during substrate scanning to pattern a substrate that includes a photoresist formed over one or more patterned materials. Displays of varying sizes can be fabricated using digital photolithography systems. The digital photolithography systems discussed herein, which may be referred to as imaging systems, use one or more exposure sources, including solid state emitter devices, for operations including patterning photoresists. Signal classifiers are used to perform shape and pattern recognition to determine whether signals received during substrate scanning are from a top photoresist surface or from sub-surface layers. One or more parameters of the imaging apparatus can be adjusted or maintained based on the signal analysis.

A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

The present invention provides an exposure method of exposing a substrate while moving an original and the substrate in a scanning direction, the method including performing a step of specifying a position of a concave-convex portion present in the substrate, and performing a step of driving the substrate, based on the position of the concave-convex portion specified and a measurement value of the position in the height direction of each measurement point obtained by causing a light beam to obliquely enter each of a plurality of measurement points while moving the substrate in the scanning direction, so that the position in the height direction of the substrate will be a target position, when exposing the substrate.

A measurement apparatus for measuring a height position of an object is provided. The apparatus comprises a light projector that projects measurement light onto the object, a light receiver that receives the measurement light reflected by the object, and a processor that determines a height position of the object based on an image of the measurement light received by the light receiver. The light projector projects a coarse detection pattern and a fine detection pattern having a periodic pattern onto the object, and the processor determines a coarse detection value of a height position of the object based on the coarse detection pattern received by the light receiver, and determines a fine detection value of a height position of the object based on the coarse detection value and the fine detection pattern received by the light receiver.

A method for controlling a scanning exposure apparatus configured for scanning an illumination profile over a substrate to form functional areas thereon. The method includes determining a control profile for dynamic control of the illumination profile during exposure of an exposure field including the functional areas, in a scanning exposure operation; and optimizing a quality of exposure of one or more individual functional areas. The optimizing may include a) extending the control profile beyond the extent of the exposure field in the scanning direction; and/or b) applying a deconvolution scheme to the control profile, wherein the structure of the deconvolution scheme is based on a dimension of the illumination profile in the scanning direction.

The alignment apparatus performs alignment of an object in a first direction along a surface of the object, based on a position of a predetermined target formed on the surface, and includes a holding unit that holds the object to be moved, an acquisition unit that acquires an image of the predetermined target formed on the surface of the object held by the holding unit, and a controller that drives the holding unit to realize a relative distance between the object and the acquisition unit in a second direction perpendicular to the surface of the object, a relative tilt between the object and the acquisition unit, or the distance and the tilt, the distance and the tilt being determined based on a correlation degree between the image acquired by the acquisition unit and a template, and detects a position of the predetermined target in the first direction based on the correlation degree.