The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

This document is directed at a method of manufacturing a semiconductor element, the method comprising manipulating a surface of a substrate using an atomic force microscope, the atomic force microscope including a probe, the probe including a cantilever and a probe tip, the substrate including at least one or more device features embedded underneath the surface. The method comprises: imaging the embedded device features, and identifying that a position of the probe tip of the atomic force microscope is aligned with the feature; and displacing the probe tip transverse to the surface for exerting a stress for performing the step of surface manipulation, as for example contact holes. Imaging is performed by applying and obtaining an acoustic signal to and from the substrate via the probe tip, including a first and a second signal component at different frequencies. The imaging and surface manipulation are performed using said same probe and probe tip.

An alignment system (100) and method for positioning and/or keeping a first object (1) at a controlled distanced (D1) with respect to a second object (2). An object stage (11) is configured to hold a surface (1a) of the first object (1) at a distance (D1) over a surface (2a) of the second object (2). A sensor device (31) comprising a probe tip (31a) is connected at a predetermined probe level distance (Dp) relative to the surface (1a) of the first object (1). The probe tip (31a) is configured to perform an atomic force measurement (AFM) of a force (F1) exerted via the probe tip (31a) on a surface (2a) of the second object (2). A controller (80) is configured to control an object stage actuator (21) as a function of the probe level distance (Dp) and the measured force (F1) to maintain the controlled distanced (D1).

The present invention discloses a stepper lithography apparatus, its lithography pattern alignment device and operating method. Several three-dimensional marks are set on the wafer as coordinate presets for positioning the wafer surface, and the three-dimensional marks are measured by the sensing technology using probe sensors to obtain coordinates of the wafer surface with sub-nanometer accuracy, the wafer stage is then moved and the new coordinates of the three-dimensional mark are measured and compared with the same three-dimensional nano-coordinates before the wafer stage is moved to obtain the error value of the wafer area position coordinates. This coordinate error is compensated by moving the relative position of the exposure beam generator and the wafer area using the closed-loop control principle to achieve accurate re-alignment of the relative coordinate positions.

A sensor is disclosed, wherein a transducer generates acoustic waves, which are received by a lens assembly. The lens assembly transmits and directs at least a part of the acoustic waves to a target. The lens assembly then receives at least a part of acoustic waves, after interaction with the target. The sensor further comprises an optical detector that comprises at least one optically reflective member located at a surface of the lens assembly, which surface is arranged opposite to a surface of the lens assembly which faces a focal plane of the lens assembly, wherein the at least one optically reflective member is mechanically displaced in response to the acoustic waves, which are received and transmitted by the lens assembly.

An atomic force microscopy device arranged for determining sub-surface structures in a sample comprises a scan head with a probe including a flexible carrier and a probe tip arranged on the flexible carrier. Therein an actuator applies an acoustic input signal to the probe and a tip position detector measures a motion of the probe tip relative to the scan head during scanning, and provides an output signal indicative of said motion, to be received and analyzed by a controller. At least an end portion of the probe tip tapers in a direction away from said flexible carrier towards an end of the probe tip. The end portion has a largest cross-sectional area Amax at a distance Dend from said end, the square root of the largest cross-sectional area Amax is at least 100 nm and the distance Dend is in the range of 0.2 to 2 the value of said square root.

Disclosed embodiments provide an electrical contact alignment strategy for leveling an array of probes, pens, tips, etc., in relationship to a substrate, for example, wherein a plurality of independent electrical circuits are formed by configuring regions of the array and substrate regions to be partially conductive and connected to opposite electrodes or vice versa.

Method of determining an overlay error between device layers of a multilayer semiconductor device using an atomic force microscopy system, wherein the semiconductor device comprises a stack of device layers comprising a first patterned layer and a second patterned layer, and wherein the atomic force microscopy system comprises a probe tip, wherein the method comprises: moving the probe tip and the semiconductor device relative to each other for scanning of the surface; and monitoring motion of the probe tip with tip position detector during said scanning for obtaining an output signal; during said scanning, applying a first acoustic input signal to at least one of the probe or the semiconductor device; analyzing the output signal for mapping at least subsurface nanostructures below the surface of the semiconductor device; and determining the overlay error between the first patterned layer and the second patterned layer based on the analysis.

An alignment system (100) and method for positioning and/or keeping a first object (1) at a controlled distanced (D1) with respect to a second object (2). An object stage (11) is configured to hold a surface (1a) of the first object (1) at a distance (D1) over a surface (2a) of the second object (2). A sensor device (31) comprising a probe tip (31a) is connected at a predetermined probe level distance (Dp) relative to the surface (1a) of the first object (1). The probe tip (31a) is configured to perform an atomic force measurement (AFM) of a force (F1) exerted via the probe tip (31a) on a surface (2a) of the second object (2). A controller (80) is configured to control an object stage actuator (21) as a function of the probe level distance (Dp) and the measured force (F1) to maintain the controlled distanced (D1).

Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.