Systems and apparatuses for a configurable, temperature dependent reference voltage generator are provided. An example apparatus includes control logic configured receive temperature data, and produce a signal, based on the temperature data, indicative of the temperature data, a temperature dependence and a temperature slope. The apparatus may also include a temperature slope reference generator configured to produce a reference voltage having the temperature dependence and the temperature slope, based on the signal from the control logic.

[Object] An electric valve control device capable of preventing a start delay of an electric valve control (an opening degree control) by shortening a waiting period of a system control device and an electric valve device including the same are provided.

[Solving Means] An electric valve control device 11 outputs a signal indicating an end or an interruption of an initialization operation to an air conditioner ECU 16 after the initialization operation of the electric valve 9 ends or is interrupted.

A semiconductor device drive method achieves a balance between a lifetime and a detection sensitivity which are required for a temperature detection diode formed via an insulating film on a substrate on which an active element is formed. The semiconductor device drive method includes energizing the temperature detection diode with a constant current, the constant current having a current density value between an upper limit defined based on the lifetime of the temperature detection diode, and a lower defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation.

A voltage and frequency scaling apparatus includes a processor, at least one sensor and a controller. The at least one sensor is electrically coupled to the processor. The at least one sensor measures at least one device characteristic of at least one logic circuit of a system on chip, and transmits at least one sensing result to the processor. The processor generates a control signal according to the at least one sensing result. The controller receives the control signal and adjusts at least one of the operating frequency and the operating voltage of at least one logic circuit. Furthermore, a system on chip (SoC) and a voltage and frequency scaling method are also described herein.

A thermostat, of the type that employs latching relays to connect thermostat power to the various wires of the thermostat run, has a re-pulse feature that supplies latching pulses at a given interval, e.g., three hours, to ensure that the relays are in their proper state agreeing with the thermostat mode and the room temperature relative to the setpoint(s). In the case that the room air temperature is changing in a manner contrary to the current heating or cooling mode, which may indicate the latching relay has been knocked or bumped and needs to have its proper state re-established, the thermostat microprocessor issues pulses to the latching relay(s) more frequently, e.g., each 30 minutes, and the re-pulses may have a longer pulse width, e.g., increased from 20 ms to 25 ms.

An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.

A semiconductor device may be provided. The semiconductor device may include a reference voltage generation circuit suitable for controlling a level of a reference voltage depending on an internal resistance value, and controlling the level of the reference voltage depending on the internal resistance value.

A touch sensing system includes a charge distributor, a pre-amplifier, an analog-to-digital converter (ADC), and a temperature compensating device. The temperature compensating device varies one or more of a first reference voltage supplied to the charge distributor, a second reference voltage supplied to the pre-amplifier, and the capacitance of the charge distributor, in response to temperature data from a temperature sensor.

A variable voltage generation circuit includes a first amplification circuit and a second amplification circuit. The first amplification circuit generates a first output voltage based on a reference voltage, a first feedback voltage, a temperature-varied voltage and a temperature-fixed voltage such that the first output voltage is varied in a first voltage range according to a variation of the operational temperature. The first amplification circuit generates the first feedback voltage based on the first output voltage. The second amplification circuit generates a second output voltage based on the first feedback voltage, a second feedback voltage, the temperature-varied voltage and the temperature-fixed voltage such that the second output voltage is varied in a second voltage range wider than the first voltage range according to the variation of the operational temperature. The second amplification circuit generates the second feedback voltage based on the second output voltage.

Disclosed herein are techniques for generating a temperature independent reference current, which may be used during calibration. The temperature independent reference current may be generated based on a current through an on-chip calibration resistor. This alleviates the need for an off chip calibration resistor, which can be costly and cause slow calibration. A voltage at one terminal of the on chip calibration resistor may be modulated to substantially cancel a temperature coefficient of the on chip calibration resistor. This may result in the current passing through the on chip calibration resistor being temperature independent. The temperature independent reference current may be based on a reference voltage and a target calibration resistance.