In one example, a method for compensating for a temperature effect during operation of a voltage regulator circuit includes applying a load current at an output of the voltage regulator circuit, measuring a first output voltage at the output, measuring a reference current or voltage, increasing the load current, measuring a change in the reference current or voltage corresponding to the increased load current, measuring a second output voltage when the measured change in the reference current exceeds a threshold, and determining a temperature coefficient (TC) value based on the measured second output voltage.

In one embodiment, a temperature management system comprises a plurality of temperature sensors on a chip, and a temperature manager. The temperature manager is configured to receive a plurality of temperature readings from the temperature sensors, to determine a plurality of power values based on the temperature readings, to determine a plurality of temperature values based on the determined power values, the determined temperature values corresponding to a plurality of different locations on the chip, and to estimate a temperature of a hotspot on the chip based on the determined temperature values.

The present disclosure describes a system, a circuit, and method for process and temperature compensation in an integrated circuit. For example, the system includes a bus, a data latch, and a voltage generator. The data latch includes a plurality of transistors coupled to the bus. The voltage generator includes a tracking transistor with one or more physical characteristics that substantially match one or more respective physical characteristicse.g., gate width and gate length dimensionsof at least one of the plurality of transistors in the data latch. The voltage generator is configured to adjust a pre-charged voltage on the bus based on an electrical characteristic of the tracking transistor.

A differential amplification circuit includes a first current control unit configured to control driving current in response to a voltage level difference between first input voltage and second input voltage, a second current control unit configured to control the driving current in response to a voltage level difference between the second input voltage independent from temperature and a temperature voltage depending on the temperature, and a signal output unit configured to generate a detection signal in response to the driving current.

Embodiments of the present disclosure provide an adjusting circuit and a display device, which are capable of limiting a fluctuation of an output voltage (V.sub.com) in the within a small range, weakening a flicker phenomenon and enhancing a display quality of a liquid crystal display. The adjusting circuit for the output voltage (V.sub.com) comprises a voltage supplying module, a temperature sensing module and an adjustment outputting module, wherein, the voltage supplying module is connected with the temperature sensing module and the adjustment outputting module, and is configured to provide input voltages to the temperature sensing module and the adjustment outputting module; the temperature sensing module is connected with the adjustment outputting module, and is configured to convert a temperature sensed into an electric signal and transmit the same to the adjustment outputting module; and the adjustment outputting module is configured to adjust an output voltage (V.sub.com) according to the electric signal transmitted by the temperature sensing module, wherein the output voltage (V.sub.com) fluctuates between an upper limit voltage and a lower limit voltage which are preset.

A semiconductor device includes: a circuit configured to operate according to a clock; a temperature sensor configured to detect a temperature of the circuit; and a controller configured to control a frequency of the clock based on a temporal difference of power consumption of the circuit when the temperature detected by the temperature sensor exceeds a predetermined value.

In accordance with an embodiment, a method of compensating for the temperature coefficient of a reference voltage includes generating a reference voltage that varies over temperature. A temperature compensated reference voltage is generated that compensates for a temperature variation in the voltage value of the reference voltage. In accordance with another embodiment, a temperature compensation circuit that compensates for temperature variation of a reference voltage is includes a reference voltage generator circuit having an output. A first impedance branch is coupled to the output of the reference voltage generator circuit and a second impedance branch is coupled to the output of the reference voltage generator circuit. A transconductance generation circuit having a first terminal connected to the first impedance branch and a second terminal connected to the second impedance branch.

Techniques for trimming an on chip ZQ calibration resistor are disclosed. The on chip ZQ calibration resistor alleviates the need for an external ZQ calibration resistor. The on chip ZQ calibration resistor allows for a faster ZQ calibration. The trimming of on chip ZQ calibration resistor may be used to account for process variation. A correction mechanism may be used to account for temperature variation. Some of the circuitry that is used for ZQ calibration is also used for trimming the on-chip calibration resistor. This circuitry may include operational amplifiers, current mirrors, transistors, etc. The dual use of the circuitry can eliminate offset errors in an operational amplifier. The dual use can eliminate current mirror mismatch. Therefore, the trimming accuracy may be improved. The dual use also reduces the amount of circuitry that is needed for trimming the on chip ZQ calibration resistor. Thus, transistor count and chip size is reduced.

A time domain integrated temperature sensor described by the present invention adopts a shaped clock signal to control the charging time of capacitors, so that the capacitors generate charging time delay signals related to the cycle of an input clock, and a pulse signal related to pulse width, temperature and the cycle of the input clock is generated through logical XOR (Exclusive OR) operation on a time delay signal generated when the capacitors are charged by one way of PTAT (Proportional To Absolute Temperature) current in an above control manner and a time delay signal generated when the capacitors are charged by one way of CTAT (Complementary To Absolute Temperature) current in the same manner; then, the same input clock signal is adopted for quantifying the pulse width of the pulse signal, the relevance of the obtained quantization result and the cycle of the input clock is completely offset, namely, an output value of the temperature sensor is unrelated to the input clock signal, thereby solving the problem that the reading of the existing time domain integrated temperature sensor is inconsistent as the cycle of the clock signal changes and improving the precision of the time domain integrated temperature sensor to a certain degree.

A temperature sensor circuit includes: an output circuit including a first field-effect transistor configured to output a current proportional to temperature when a voltage twice as high as a threshold voltage is applied to a gate of the first field-effect transistor; and a voltage generating circuit configured to generate the voltage twice as high as the threshold voltage by a plurality of field-effect transistors and supply the generated voltage twice as high as the threshold voltage to the gate of the first field-effect transistor.