The charge transfer transistors of a positive or negative charge pump are biased at their gate terminals with a control voltage that provides for an higher level of gate-to-source voltage in order to reduce switch resistance in passing a boosted (positive or negative) voltage to a voltage output of the charge pump. This control voltage is generated using a bootstrapping circuit whose polarity of operation (i.e., negative or positive) is opposite to a polarity (i.e., positive or negative) of the charge pump.

The charge transfer transistors of a positive or negative charge pump are biased at their gate terminals with a control voltage that provides for an higher level of gate-to-source voltage in order to reduce switch resistance in passing a boosted (positive or negative) voltage to a voltage output of the charge pump. This control voltage is generated using a bootstrapping circuit whose polarity of operation (i.e., negative or positive) is opposite to a polarity (i.e., positive or negative) of the charge pump.

An integrated circuit includes: a power supply line configured to receive a power supply voltage; a constant current source electrically coupled to the power supply line;

a reference voltage circuit electrically coupled to the constant current source; and a first resistor having two ends, one end thereof being electrically coupled to the constant current source, and the other end thereof being electrically coupled to the reference voltage circuit. The reference voltage circuit is a bandgap circuit including a plurality pf bipolar devices. The first resistor is configured to decrease a leakage current in the bipolar devices when a temperature thereof rises.

An integrated circuit includes: a power supply line configured to receive a power supply voltage; a constant current source electrically coupled to the power supply line;

a reference voltage circuit electrically coupled to the constant current source; and a first resistor having two ends, one end thereof being electrically coupled to the constant current source, and the other end thereof being electrically coupled to the reference voltage circuit. The reference voltage circuit is a bandgap circuit including a plurality pf bipolar devices. The first resistor is configured to decrease a leakage current in the bipolar devices when a temperature thereof rises.

A power supply circuitry includes a first transistor, a feedback circuit, a first differential amplifier circuit, a second differential amplifier circuit, and a first control circuit. The first transistor outputs a power supply voltage based on a drive signal. The feedback circuit generates a feedback voltage of the power supply voltage. The first differential amplifier circuit amplifies a difference between the feedback voltage and a reference voltage, and outputs the drive signal. The second differential amplifier circuit amplifies a difference between the reference voltage and the feedback voltage. The first control circuit detects a change in the power supply voltage by using a differentiation circuit and controls the power supply voltage based on an output of the second differential amplifier circuit.

A power supply circuitry includes a first transistor, a feedback circuit, a first differential amplifier circuit, a second differential amplifier circuit, and a first control circuit. The first transistor outputs a power supply voltage based on a drive signal. The feedback circuit generates a feedback voltage of the power supply voltage. The first differential amplifier circuit amplifies a difference between the feedback voltage and a reference voltage, and outputs the drive signal. The second differential amplifier circuit amplifies a difference between the reference voltage and the feedback voltage. The first control circuit detects a change in the power supply voltage by using a differentiation circuit and controls the power supply voltage based on an output of the second differential amplifier circuit.

A semiconductor circuit and a method of operating the same are provided. The semiconductor circuit comprises a first digital-to-analog converter configured to generate a first output current in response to a first binary code, and a second digital-to-analog converter configured to generate a second output current in response to a second binary code associated with the first binary code. The semiconductor circuit further comprises a first current-to-voltage converter configured to generate a first candidate voltage based on the first output current, and a second current-to-voltage converter configured to generate a second candidate voltage based on the second output current. The semiconductor circuit further comprises a multiplexer configured to output the target voltage based on the first candidate voltage or the second candidate voltage. The target voltage includes a configurable range associated with the second binary code.

A low dropout regulator is disclosed. The low dropout regulator includes an amplifier, a first transistor, a second transistor and a switch. When a supply voltage value of the low dropout regulator is less than a supply voltage threshold value, a first path of the switch is selected and a first switch voltage value is transmitted to the first transistor so as to fully conduct the first transistor, and an output voltage value of the low dropout regulator is equal to the supply voltage value. When the supply voltage value is not less than the supply voltage threshold value, a second path of the switch is selected and a second switch voltage value is transmitted to the first transistor so as to turn off the first transistor, and the output voltage value is adjusted by the second transistor and the amplifier.

A low dropout regulator is disclosed. The low dropout regulator includes an amplifier, a first transistor, a second transistor and a switch. When a supply voltage value of the low dropout regulator is less than a supply voltage threshold value, a first path of the switch is selected and a first switch voltage value is transmitted to the first transistor so as to fully conduct the first transistor, and an output voltage value of the low dropout regulator is equal to the supply voltage value. When the supply voltage value is not less than the supply voltage threshold value, a second path of the switch is selected and a second switch voltage value is transmitted to the first transistor so as to turn off the first transistor, and the output voltage value is adjusted by the second transistor and the amplifier.

An active compensation circuit for compensating the stability of a regulator is provided. The active compensation circuit presents an equivalent capacitance and an equivalent resistance and compensates stability of system using the equivalent capacitance and the equivalent resistance. The regulator includes a power transistor that receives a driving signal and channelize the required current to the Ips driven by this block. The regulator's stability is compensated using the active compensation circuit to provide an accurate output voltage without significantly compromising the accuracy (load regulation) and area of the system.