According to one embodiment, a nonvolatile memory includes a plurality of memory areas and controller circuit including an error correction code encoder. The error correction code encoder encodes a first data to generate a first parity in a first operation and encodes a second data to generate a second parity in a second operation. The controller circuit writes the first data and the first parity into a first memory area among the plurality of memory areas and writes the second data and the second parity into a second memory area among the plurality of memory areas. The size of the second data is smaller than the size of the first data and the size of the second parity is equal to the size of the first parity.

A system and method for advanced storage device telemetry. The system includes multiple SSDs. I/O is executed on the SSDs in conjunction with a host software. As the I/O is executed, error log information is stored in a persistent memory as well as in a volatile memory. In various embodiments, granular performance information for the execution of the I/O is also stored in a persistent memory.

Several embodiments of memory devices and systems for real time block failure analysis are disclosed herein. In one embodiment, a system includes a memory array including a plurality of memory cells and a processing device coupled to the memory array. The processing device is configured to sense, in response to detection of an error associated with a subset of a plurality of memory cells of the memory device, a state associated with each memory cell of the subset of the plurality of memory cells. The processing device is further configured to store state distribution information in a persistent memory, the state distribution information comprising the sensed state associated with each memory cell of the subset.

A computer-implemented method, according to one embodiment, is for selectively storing parity data in different types of memory which include a higher performance memory and a lower performance memory. The computer-implemented method includes: receiving a write request, and determining whether the write request includes parity data. In response to determining that the write request includes parity data, a determination is made as to whether a write heat of the parity data is in a predetermined range. In response to determining that that write heat of the parity data is in the predetermined range, another determination is made as to whether the parity data has been read since a last time the parity data was updated. Furthermore, in response to determining that the parity data has been read since a last time the parity data was updated, the parity data is stored in the higher performance memory.

A method of detecting parity of weak magnetic fields includes inputting a first electromagnetic pump drive to a first three-wave mixing Josephson device via a first 90 deg. hybrid; inputting a second electromagnetic pump drive to a second three-wave mixing Josephson device through the first 90 deg. hybrid; and inputting a first electromagnetic wave via a second 90 deg. hybrid connected to the first three-wave mixing Josephson device to output a second electromagnetic wave through the second three-wave mixing Josephson device. The method includes transmitting a third electromagnetic wave via the second 90 deg. hybrid to a third 90 deg. hybrid; and detecting a parity of a first magnet field applied by a first magnetic source and a second magnetic field applied by a second magnetic source based on constructive wave interference or destructive wave interference of the second electromagnetic wave and the third electromagnetic wave.

A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.

The present application describes embodiments of an interface for coupling flash memory and dynamic random access memory (DRAM) in a processing system. Some embodiments include a dedicated interface between a flash memory and DRAM. The dedicated interface is to provide access to the flash memory in response to instructions received over a DRAM interface between the DRAM and a processing device. Some embodiments of a method include accessing a flash memory via a dedicated interface between the flash memory and a dynamic random access memory (DRAM) in response to an instruction received over a DRAM interface between the DRAM and a processing device.

Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

Tracking address ranges for computer memory errors including detecting, by memory logic, an error at a memory address, the memory address representing one or more memory cells at a physical location of computer memory; reporting, by the memory logic to memory firmware, the detected error including providing the memory firmware with the memory address; identifying, by the memory firmware, an address range affected by the detected error including scanning the computer memory in dependence upon the memory address; determining, by the memory firmware, a region size based on the address range affected by the detected error; and populating an entry in a mark table corresponding to the detected error, including populating a field specifying the region size and a field specifying a match address corresponding to the memory address.

A storage cluster is provided. The storage cluster includes a plurality of storage nodes, each of the plurality of storage nodes having nonvolatile solid-state memory and a plurality of operations queues coupled to the solid-state memory. The plurality of storage nodes is configured to distribute the user data and metadata throughout the plurality of storage nodes such that the plurality of storage nodes can access the user data with a failure of two of the plurality of storage nodes. Each of the plurality of storage nodes is configured to determine whether a read of 1 or more bits in the solid-state memory via a first path is within a latency budget. The plurality of storage nodes is configured to perform a read of user data or metadata via a second path, responsive to a determination that the read of the bit via the first path is not within the latency budget.