A memory device is disclosed that includes a row of storage locations that form plural columns. The plural columns include data columns to store data and a tag column to store tag information associated with error locations in the data columns. Each data column is associated with an error correction location including an error code bit location. Logic retrieves and stores the tag information associated with the row in response to activation of the row. A bit error in an accessed data column is repaired by a spare bit location based on the tag information.

An example apparatus for error correction can include an array of memory cells and a controller. The controller can be configured to perform a dummy read on a portion of data stored in the array. The dummy read can include sending a portion of data on output buffers to a host. The controller can be configured to error correct the portion of data in the host. The controller can be configured to write the portion of data back to the array.

A method is proposed for operating a solid state storage device. The method comprises: encoding information and frozen bits into polar encoded bits; storing the polar encoded bits; reading the polar encoded bits, wherein the read polar encoded bits include the frozen bits and unfrozen bits, and performing a SCL decoding. The SCL decoding comprises: providing a list of candidate decoding paths; duplicating the candidate decoding paths; determining a maximum list size indicative of an allowed maximum number of candidate decoding paths that can be contained in the list of candidate decoding paths; pruning at least one duplicated candidate decoding path according to the maximum list size, and including in the list of candidate decoding paths a number of non-pruned duplicated candidate decoding paths not higher than the maximum list size; and selecting a decoding path from the list of candidate decoding paths.

A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Implementations of encoding techniques are disclosed. The encoding technique, such as a Data bus Inversion (DBI) technique, is implementable in a vertically-stacked memory module, but is not limited thereto. The module can be a plurality of memory integrated circuits which are vertically stacked, and which communicate via a bus formed in one embodiment of channels comprising Through-Wafer Interconnects (TWIs), but again is not limited thereto. One such module includes spare channels that are normally used to reroute a data signal on the bus away from faulty data channels. In one disclosed technique, the status of a spare channel or channels is queried, and if one or more are unused, they can be used to carry a DBI bit, thus allowing at least a portion of the bus to be assessed in accordance with a DBI algorithm. Depending on the location and number of spare channels needed for rerouting, DBI can be apportioned across the bus in various manners. Implementations can also be used with other encoding techniques not comprising DBI.

The present disclosure includes apparatuses and methods related to data movement operations in non-volatile memory. An example apparatus can comprise an array of non-volatile memory cells including a plurality of sections each with a plurality of rows and a controller configured to move data stored in a first portion of the array from a first row of a first section to a second row of the first section and move data stored in a second portion of the array from a second section to the first to create an open row in the second section in response to data from a particular number of portions of memory cells in the first section being moved within the first section.

A memory controller includes a controller input/output circuit configured to output a first command to read first data, and output a second command to read an error corrected portion of the first data. A memory device includes: an error detector, a data storage circuit and an error correction circuit. The error detector is configured to detect a number of error bits in data read from a memory cell in response to a first command. The data storage circuit is configured to store the read data if the detected number of error bits is greater than or equal to a first threshold value. The error correction circuit is configured to correct the stored data.

A read method executed by a computing system includes a processor, at least one nonvolatile memory, and at least one cache memory performing a cache function of the at least one nonvolatile memory. The method includes receiving a read request regarding a critical word from the processor. A determination is made whether a cache miss is generated, through a tag determination operation corresponding to the read request. Page data corresponding to the read request is received from the at least one nonvolatile memory in a wraparound scheme when a result of the tag determination operation indicates that the cache miss is generated. The critical word is output to the processor when the critical word of the page data is received.

A cloud-based ETL system provides error detection, error correction and reporting of data integration flows hosted by cloud services. Categories of errors are identified using one or more checks at different points of a data integration flow and one or more actions selected based at least in part on the error category. A determination can be made whether the error category is fault tolerant and one or more actions can be selected based at least in part on the error fault tolerance to correct the error, restart a flow, or generate a notification assisting a user to correct the error.

A memory system includes a memory device, and a controller suitable for correcting errors included in request data read through a first read operation performed by the memory device in response to a read command provided from a host, and providing corrected data to the host, wherein the controller includes a first read processor suitable for performing the first read operation, a second read processor suitable for performing a second read operation, a third read processor suitable for performing a third read operation, and a fourth read processor suitable for detecting an optimal read voltage through an e-boost operation and performing a fourth read operation.