Patent classifications
G06F12/0692
MODIFYING SUBSETS OF MEMORY BANK OPERATING PARAMETERS
Methods, systems, and devices for modifying subsets of memory bank operating parameters are described. First global trimming information may be configured to adjust a first subset of operating parameters for a set of memory banks within a memory system. Second global trimming information may be configured to adjust a second subset of operating parameters for the set of memory banks. Local trimming information may be used to adjust one of the subsets of the operating parameters for a subset of the memory banks. To adjust one of the subsets of the operating parameters, the local trimming information may be combined with one of the first or second global trimming information to yield additional local trimming information that is used to adjust a corresponding subset of the operating parameters at the subset of the memory banks.
Neural network processor incorporating separate control and data fabric
A novel and useful neural network (NN) processing core adapted to implement artificial neural networks (ANNs) and incorporating strictly separate control and data planes. The NN processor is constructed from self-contained computational units organized in a hierarchical architecture. The homogeneity enables simpler management and control of similar computational units, aggregated in multiple levels of hierarchy. Computational units are designed with minimal overhead as possible, where additional features and capabilities are aggregated at higher levels in the hierarchy. On-chip memory provides storage for content inherently required for basic operation at a particular hierarchy and is coupled with the computational resources in an optimal ratio. Lean control provides just enough signaling to manage only the operations required at a particular hierarchical level. Dynamic resource assignment agility is provided which can be adjusted as required depending on resource availability and capacity of the device.
DEEP LEARNING APPROACH TO MITIGATE THE COLD-START PROBLEM IN TEXTUAL ITEMS RECOMMENDATIONS
A method for mitigating cold starts in recommendations includes receiving a request that identifies a requested page and identifying a content vector of the requested page. The content vector is generated based on providing text of the requested page to a neural network text encoder. The method further includes selecting, based on the content vector, a link to a cold start page that does not satisfy a threshold level of interaction data. The selected link is ranked above a second link to a warm page that does satisfy the threshold level of the interaction data. The method further includes presenting the requested page with the selected link.
ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
A read command is received by a processing device coupled to a memory device. The read command specified a logical address. The processing device translates the logical address into a physical address of a physical block of the memory device, wherein the physical address specifies a wordline and a memory device die. Responsive to determining that the physical block is partially programmed, the processing device identifies a threshold voltage offset associated with the wordline. The processing device computes a modified threshold voltage by applying the threshold voltage offset to a read level associated with the memory device die. The processing device reads the data from the physical block using the modified threshold voltage.
STORAGE SYSTEM WITH INTERCONNECTED SOLID STATE DISKS
An embodiment of a semiconductor package apparatus may include technology to provide a first interface between a first storage device and a host device, and provide a second interface directly between the first storage device and a second storage device. Other embodiments are disclosed and claimed.
TECHNOLOGIES FOR OFFLOADING ACCELERATION TASK SCHEDULING OPERATIONS TO ACCELERATOR SLEDS
Technologies for offloading acceleration task scheduling operations to accelerator sleds include a compute device to receive a request from a compute sled to accelerate the execution of a job, which includes a set of tasks. The compute device is also to analyze the request to generate metadata indicative of the tasks within the job, a type of acceleration associated with each task, and a data dependency between the tasks. Additionally the compute device is to send an availability request, including the metadata, to one or more micro-orchestrators of one or more accelerator sleds communicatively coupled to the compute device. The compute device is further to receive availability data from the one or more micro-orchestrators, indicative of which of the tasks the micro-orchestrator has accepted for acceleration on the associated accelerator sled. Additionally, the compute device is to assign the tasks to the one or more micro-orchestrators as a function of the availability data.
Technologies for providing accelerated functions as a service in a disaggregated architecture
Technologies for providing accelerated functions as a service in a disaggregated architecture include a compute device that is to receive a request for an accelerated task. The task is associated with a kernel usable by an accelerator sled communicatively coupled to the compute device to execute the task. The compute device is further to determine, in response to the request and with a database indicative of kernels and associated accelerator sleds, an accelerator sled that includes an accelerator device configured with the kernel associated with the request. Additionally, the compute device is to assign the task to the determined accelerator sled for execution. Other embodiments are also described and claimed.
Modifying subsets of memory bank operating parameters
Methods, systems, and devices for modifying subsets of memory bank operating parameters are described. First global trimming information may be configured to adjust a first subset of operating parameters for a set of memory banks within a memory system. Second global trimming information may be configured to adjust a second subset of operating parameters for the set of memory banks. Local trimming information may be used to adjust one of the subsets of the operating parameters for a subset of the memory banks. To adjust one of the subsets of the operating parameters, the local trimming information may be combined with one of the first or second global trimming information to yield additional local trimming information that is used to adjust a corresponding subset of the operating parameters at the subset of the memory banks.
TECHNOLOGIES FOR DIVIDING WORK ACROSS ACCELERATOR DEVICES
Technologies for dividing work across one or more accelerator devices include a compute device. The compute device is to determine a configuration of each of multiple accelerator devices of the compute device, receive a job to be accelerated from a requester device remote from the compute device, and divide the job into multiple tasks for a parallelization of the multiple tasks among the one or more accelerator devices, as a function of a job analysis of the job and the configuration of each accelerator device. The compute engine is further to schedule the tasks to the one or more accelerator devices based on the job analysis and execute the tasks on the one or more accelerator devices for the parallelization of the multiple tasks to obtain an output of the job.
DYNAMIC RANDOM ACCESS MEMORY APPLIED TO AN EMBEDDED DISPLAY PORT
A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.